Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

Maria Aboy; L. Pelaz; L. A. Marqués; P. López; I. Santos; J. Barbolla; R. Duffy

doi:10.1109/SCED.2005.1504479

Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

Maria Aboy
, L. Pelaz
, L. A. Marqués
, P. López
, I. Santos
, J. Barbolla
, R. Duffy

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We analyze the effects of junction formation by low-temperature solid phase epitaxial regrowth in NMOS transistors. Atomistic simulations indicate that the high concentration of Si interstitials associated with the end of range (EOR) defects favors the local formation of boron clusters just beyond the amorphous/crystalline interface, in agreement to sheet resistance measurements. Thus, EOR defects locally deactivate B in the NMOS pockets. These boron clusters start dissolution, and thus B reactivates, when the high Si interstitial supersaturation produced by the EOR defects decays close to the equilibrium value. This occurs when EOR defects dissolve or evolve to very stable configurations, such us dislocation loops.

Original language	English
Title of host publication	2005 Spanish Conference on Electron Devices, Proceedings
Pages	451-454
Number of pages	4
DOIs	https://doi.org/10.1109/SCED.2005.1504479
Publication status	Published - 2005
Externally published	Yes
Event	2005 Spanish Conference on Electron Devices - Tarragona, Spain Duration: 2 Feb 2005 → 4 Feb 2005

Publication series

Name	2005 Spanish Conference on Electron Devices, Proceedings
Volume	2005

Conference

Conference	2005 Spanish Conference on Electron Devices
Country/Territory	Spain
City	Tarragona
Period	2/02/05 → 4/02/05

Access to Document

10.1109/SCED.2005.1504479

Cite this

Aboy, M., Pelaz, L., Marqués, L. A., López, P., Santos, I., Barbolla, J., & Duffy, R. (2005). Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions. In 2005 Spanish Conference on Electron Devices, Proceedings (pp. 451-454). Article 1504479 (2005 Spanish Conference on Electron Devices, Proceedings; Vol. 2005). https://doi.org/10.1109/SCED.2005.1504479

@inproceedings{0ec1bb572439457d94e362fed012e244,

title = "Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions",

abstract = "We analyze the effects of junction formation by low-temperature solid phase epitaxial regrowth in NMOS transistors. Atomistic simulations indicate that the high concentration of Si interstitials associated with the end of range (EOR) defects favors the local formation of boron clusters just beyond the amorphous/crystalline interface, in agreement to sheet resistance measurements. Thus, EOR defects locally deactivate B in the NMOS pockets. These boron clusters start dissolution, and thus B reactivates, when the high Si interstitial supersaturation produced by the EOR defects decays close to the equilibrium value. This occurs when EOR defects dissolve or evolve to very stable configurations, such us dislocation loops.",

author = "Maria Aboy and L. Pelaz and Marqu{\'e}s, \{L. A.\} and P. L{\'o}pez and I. Santos and J. Barbolla and R. Duffy",

year = "2005",

doi = "10.1109/SCED.2005.1504479",

language = "English",

isbn = "0780388100",

series = "2005 Spanish Conference on Electron Devices, Proceedings",

pages = "451--454",

booktitle = "2005 Spanish Conference on Electron Devices, Proceedings",

note = "2005 Spanish Conference on Electron Devices ; Conference date: 02-02-2005 Through 04-02-2005",

}

Aboy, M, Pelaz, L, Marqués, LA, López, P, Santos, I, Barbolla, J & Duffy, R 2005, Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions. in 2005 Spanish Conference on Electron Devices, Proceedings., 1504479, 2005 Spanish Conference on Electron Devices, Proceedings, vol. 2005, pp. 451-454, 2005 Spanish Conference on Electron Devices, Tarragona, Spain, 2/02/05. https://doi.org/10.1109/SCED.2005.1504479

Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions. / Aboy, Maria; Pelaz, L.; Marqués, L. A. et al.
2005 Spanish Conference on Electron Devices, Proceedings. 2005. p. 451-454 1504479 (2005 Spanish Conference on Electron Devices, Proceedings; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

AU - Aboy, Maria

AU - Pelaz, L.

AU - Marqués, L. A.

AU - López, P.

AU - Santos, I.

AU - Barbolla, J.

AU - Duffy, R.

PY - 2005

Y1 - 2005

N2 - We analyze the effects of junction formation by low-temperature solid phase epitaxial regrowth in NMOS transistors. Atomistic simulations indicate that the high concentration of Si interstitials associated with the end of range (EOR) defects favors the local formation of boron clusters just beyond the amorphous/crystalline interface, in agreement to sheet resistance measurements. Thus, EOR defects locally deactivate B in the NMOS pockets. These boron clusters start dissolution, and thus B reactivates, when the high Si interstitial supersaturation produced by the EOR defects decays close to the equilibrium value. This occurs when EOR defects dissolve or evolve to very stable configurations, such us dislocation loops.

AB - We analyze the effects of junction formation by low-temperature solid phase epitaxial regrowth in NMOS transistors. Atomistic simulations indicate that the high concentration of Si interstitials associated with the end of range (EOR) defects favors the local formation of boron clusters just beyond the amorphous/crystalline interface, in agreement to sheet resistance measurements. Thus, EOR defects locally deactivate B in the NMOS pockets. These boron clusters start dissolution, and thus B reactivates, when the high Si interstitial supersaturation produced by the EOR defects decays close to the equilibrium value. This occurs when EOR defects dissolve or evolve to very stable configurations, such us dislocation loops.

UR - https://www.scopus.com/pages/publications/33745697837

U2 - 10.1109/SCED.2005.1504479

DO - 10.1109/SCED.2005.1504479

M3 - Conference proceeding

AN - SCOPUS:33745697837

SN - 0780388100

SN - 9780780388109

T3 - 2005 Spanish Conference on Electron Devices, Proceedings

SP - 451

EP - 454

BT - 2005 Spanish Conference on Electron Devices, Proceedings

T2 - 2005 Spanish Conference on Electron Devices

Y2 - 2 February 2005 through 4 February 2005

ER -

Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

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