Simulation of quantum current oscillations in trigate SOI MOSFETs

Nima Dehdashti Akhavan; Aryan Afzalian; Chi Woo Lee; Ran Yan; Isabelle Ferain; Pedram Razavi; Giorgos Fagas; Jean Pierre Colinge

doi:10.1109/TED.2010.2044295

Simulation of quantum current oscillations in trigate SOI MOSFETs

Nima Dehdashti Akhavan
, Aryan Afzalian
, Chi Woo Lee
, Ran Yan
, Isabelle Ferain
, Pedram Razavi
, Giorgos Fagas
, Jean Pierre Colinge

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).

Original language	English
Article number	22
Pages (from-to)	1102-1109
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	5
DOIs	https://doi.org/10.1109/TED.2010.2044295
Publication status	Published - May 2010

Keywords

1-D quantum transport
3-D simulation
Current oscillation
Low temperature
Multiple-gate MOSFET
Nanowire
Numerical device modeling

Access to Document

10.1109/TED.2010.2044295

Cite this

@article{2670775f00e14cbf8050096688b63672,

title = "Simulation of quantum current oscillations in trigate SOI MOSFETs",

abstract = "In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).",

keywords = "1-D quantum transport, 3-D simulation, Current oscillation, Low temperature, Multiple-gate MOSFET, Nanowire, Numerical device modeling",

author = "Akhavan, \{Nima Dehdashti\} and Aryan Afzalian and Lee, \{Chi Woo\} and Ran Yan and Isabelle Ferain and Pedram Razavi and Giorgos Fagas and Colinge, \{Jean Pierre\}",

year = "2010",

month = may,

doi = "10.1109/TED.2010.2044295",

language = "English",

volume = "57",

pages = "1102--1109",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Simulation of quantum current oscillations in trigate SOI MOSFETs

AU - Akhavan, Nima Dehdashti

AU - Afzalian, Aryan

AU - Lee, Chi Woo

AU - Yan, Ran

AU - Ferain, Isabelle

AU - Razavi, Pedram

AU - Fagas, Giorgos

AU - Colinge, Jean Pierre

PY - 2010/5

Y1 - 2010/5

N2 - In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).

AB - In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).

KW - 1-D quantum transport

KW - 3-D simulation

KW - Current oscillation

KW - Low temperature

KW - Multiple-gate MOSFET

KW - Nanowire

KW - Numerical device modeling

UR - https://www.scopus.com/pages/publications/77951623418

U2 - 10.1109/TED.2010.2044295

DO - 10.1109/TED.2010.2044295

M3 - Article

AN - SCOPUS:77951623418

SN - 0018-9383

VL - 57

SP - 1102

EP - 1109

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

M1 - 22

ER -

Simulation of quantum current oscillations in trigate SOI MOSFETs

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this