Simulation study of high voltage vertical GaN nanowire field effect transistor

Gourab Sabui; Vitaly Z. Zubialevich; Pietro Pampili; Mary White; Peter J. Parbrook; Mathew McLaren; Miryam Arredondo-Arechavala; Z. John Shen

doi:10.1149/08007.0069ecst

Simulation study of high voltage vertical GaN nanowire field effect transistor

Gourab Sabui
, Vitaly Z. Zubialevich
, Pietro Pampili
, Mary White
, Peter J. Parbrook
, Mathew McLaren
, Miryam Arredondo-Arechavala
, Z. John Shen

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Concept of vertical Gallium Nitride (GaN) nanowire field effect transistors (NWFETs) for high voltage power electronic applications is investigated through three dimensional (3D) TCAD simulations in this paper. The proposed GaN NWFET can operate either in a normally-off or a normally-on mode depending on the specific device design. A gate-all-around (GAA) structure coupled with a strong dielectric REduced SURface Field (RESURF) effect has the potential to offer blocking voltages over 900 V with very low specific on-resistance for the NWFETs. V_RB²/R_ON and Q_GD x R_DS(ON) Figures of Merits (FoMs) of the NWFET are extracted and compared with other state of the art GaN, SiC and Si field effect transistors to get a comparative understanding of the potential of the NW architecture for high voltage applications.

Original language	English
Title of host publication	ECS Transactions
Editors	M. Dudley, M. Bakowski, N. Ohtani, B. Raghothamachar, K. Shenai
Publisher	Electrochemical Society Inc.
Pages	69-85
Number of pages	17
Edition	7
ISBN (Electronic)	9781607688242
DOIs	https://doi.org/10.1149/08007.0069ecst
Publication status	Published - 17 Aug 2017
Event	Gallium Nitride and Silicon Carbide Power Technologies 7 - 232nd ECS Meeting - National Harbor, United States Duration: 1 Oct 2017 → 5 Oct 2017

Publication series

Name	ECS Transactions
Number	7
Volume	80
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Gallium Nitride and Silicon Carbide Power Technologies 7 - 232nd ECS Meeting
Country/Territory	United States
City	National Harbor
Period	1/10/17 → 5/10/17

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10.1149/08007.0069ecst

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Sabui, G., Zubialevich, V. Z., Pampili, P., White, M., Parbrook, P. J., McLaren, M., Arredondo-Arechavala, M., & Shen, Z. J. (2017). Simulation study of high voltage vertical GaN nanowire field effect transistor. In M. Dudley, M. Bakowski, N. Ohtani, B. Raghothamachar, & K. Shenai (Eds.), ECS Transactions (7 ed., pp. 69-85). (ECS Transactions; Vol. 80, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/08007.0069ecst

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title = "Simulation study of high voltage vertical GaN nanowire field effect transistor",

abstract = "Concept of vertical Gallium Nitride (GaN) nanowire field effect transistors (NWFETs) for high voltage power electronic applications is investigated through three dimensional (3D) TCAD simulations in this paper. The proposed GaN NWFET can operate either in a normally-off or a normally-on mode depending on the specific device design. A gate-all-around (GAA) structure coupled with a strong dielectric REduced SURface Field (RESURF) effect has the potential to offer blocking voltages over 900 V with very low specific on-resistance for the NWFETs. VRB2/RON and QGD x RDS(ON) Figures of Merits (FoMs) of the NWFET are extracted and compared with other state of the art GaN, SiC and Si field effect transistors to get a comparative understanding of the potential of the NW architecture for high voltage applications.",

author = "Gourab Sabui and Zubialevich, \{Vitaly Z.\} and Pietro Pampili and Mary White and Parbrook, \{Peter J.\} and Mathew McLaren and Miryam Arredondo-Arechavala and Shen, \{Z. John\}",

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year = "2017",

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day = "17",

doi = "10.1149/08007.0069ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "7",

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editor = "M. Dudley and M. Bakowski and N. Ohtani and B. Raghothamachar and K. Shenai",

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Sabui, G, Zubialevich, VZ, Pampili, P, White, M , Parbrook, PJ, McLaren, M, Arredondo-Arechavala, M & Shen, ZJ 2017, Simulation study of high voltage vertical GaN nanowire field effect transistor. in M Dudley, M Bakowski, N Ohtani, B Raghothamachar & K Shenai (eds), ECS Transactions. 7 edn, ECS Transactions, no. 7, vol. 80, Electrochemical Society Inc., pp. 69-85, Gallium Nitride and Silicon Carbide Power Technologies 7 - 232nd ECS Meeting, National Harbor, United States, 1/10/17. https://doi.org/10.1149/08007.0069ecst

Simulation study of high voltage vertical GaN nanowire field effect transistor. / Sabui, Gourab; Zubialevich, Vitaly Z.; Pampili, Pietro et al.
ECS Transactions. ed. / M. Dudley; M. Bakowski; N. Ohtani; B. Raghothamachar; K. Shenai. 7. ed. Electrochemical Society Inc., 2017. p. 69-85 (ECS Transactions; Vol. 80, No. 7).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Simulation study of high voltage vertical GaN nanowire field effect transistor

AU - Sabui, Gourab

AU - Zubialevich, Vitaly Z.

AU - Pampili, Pietro

AU - White, Mary

AU - Parbrook, Peter J.

AU - McLaren, Mathew

AU - Arredondo-Arechavala, Miryam

AU - Shen, Z. John

PY - 2017/8/17

Y1 - 2017/8/17

N2 - Concept of vertical Gallium Nitride (GaN) nanowire field effect transistors (NWFETs) for high voltage power electronic applications is investigated through three dimensional (3D) TCAD simulations in this paper. The proposed GaN NWFET can operate either in a normally-off or a normally-on mode depending on the specific device design. A gate-all-around (GAA) structure coupled with a strong dielectric REduced SURface Field (RESURF) effect has the potential to offer blocking voltages over 900 V with very low specific on-resistance for the NWFETs. VRB2/RON and QGD x RDS(ON) Figures of Merits (FoMs) of the NWFET are extracted and compared with other state of the art GaN, SiC and Si field effect transistors to get a comparative understanding of the potential of the NW architecture for high voltage applications.

AB - Concept of vertical Gallium Nitride (GaN) nanowire field effect transistors (NWFETs) for high voltage power electronic applications is investigated through three dimensional (3D) TCAD simulations in this paper. The proposed GaN NWFET can operate either in a normally-off or a normally-on mode depending on the specific device design. A gate-all-around (GAA) structure coupled with a strong dielectric REduced SURface Field (RESURF) effect has the potential to offer blocking voltages over 900 V with very low specific on-resistance for the NWFETs. VRB2/RON and QGD x RDS(ON) Figures of Merits (FoMs) of the NWFET are extracted and compared with other state of the art GaN, SiC and Si field effect transistors to get a comparative understanding of the potential of the NW architecture for high voltage applications.

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A2 - Bakowski, M.

A2 - Ohtani, N.

A2 - Raghothamachar, B.

A2 - Shenai, K.

PB - Electrochemical Society Inc.

T2 - Gallium Nitride and Silicon Carbide Power Technologies 7 - 232nd ECS Meeting

Y2 - 1 October 2017 through 5 October 2017

ER -

Simulation study of high voltage vertical GaN nanowire field effect transistor

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