Single crystalline Ge _1-x Mn _x nanowires as building blocks for nanoelectronics

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm ²/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.