Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications
- K. Ben Ali
- , P. M. Gammon
- , C. W. Chan
- , F. Li
- , V. Pathirana
- , T. Trajkovic
- , F. Gity
- , D. Flandre
- , V. Kilchytska
- Université catholique de Louvain
- University of Warwick
- Cambridge Microelectronics Ltd
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review