Skip to main navigation Skip to search Skip to main content

Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications

  • K. Ben Ali
  • , P. M. Gammon
  • , C. W. Chan
  • , F. Li
  • , V. Pathirana
  • , T. Trajkovic
  • , F. Gity
  • , D. Flandre
  • , V. Kilchytska

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Fingerprint

Dive into the research topics of 'Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications'. Together they form a unique fingerprint.
Sort by

Engineering