Single facet semiconductor laser with deep etched V-notch reflectors integrated with an active multimode interference reflector

Mohamad Dernaika; Ludovic Caro; Niall P. Kelly; Frank H. Peters

doi:10.1080/09500340.2017.1327621

Single facet semiconductor laser with deep etched V-notch reflectors integrated with an active multimode interference reflector

Mohamad Dernaika
, Ludovic Caro
, Niall P. Kelly
, Frank H. Peters

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

A single mode laser based on novel deep etched V-notch reflectors is presented in this paper. The reported device has a stable single mode operation and a side mode suppression ratio of 37 dB. The laser is widely tunable and it can be fine-tuned. Moreover, the laser cavity is monolithically integrated with an active multimode interference reflector, and has a total length of 860 µm.

Original language	English
Pages (from-to)	1941-1946
Number of pages	6
Journal	Journal of Modern Optics
Volume	64
Issue number	19
DOIs	https://doi.org/10.1080/09500340.2017.1327621
Publication status	Published - 28 Oct 2017

Keywords

InP
Semiconductor laser
single mode laser

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10.1080/09500340.2017.1327621

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title = "Single facet semiconductor laser with deep etched V-notch reflectors integrated with an active multimode interference reflector",

abstract = "A single mode laser based on novel deep etched V-notch reflectors is presented in this paper. The reported device has a stable single mode operation and a side mode suppression ratio of 37 dB. The laser is widely tunable and it can be fine-tuned. Moreover, the laser cavity is monolithically integrated with an active multimode interference reflector, and has a total length of 860 µm.",

keywords = "InP, Semiconductor laser, single mode laser",

author = "Mohamad Dernaika and Ludovic Caro and Kelly, \{Niall P.\} and Peters, \{Frank H.\}",

note = "Publisher Copyright: {\textcopyright} 2017 The Author(s). Published by Informa UK Limited, trading as Taylor \& Francis Group.",

year = "2017",

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doi = "10.1080/09500340.2017.1327621",

language = "English",

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AU - Dernaika, Mohamad

AU - Caro, Ludovic

AU - Kelly, Niall P.

AU - Peters, Frank H.

PY - 2017/10/28

Y1 - 2017/10/28

N2 - A single mode laser based on novel deep etched V-notch reflectors is presented in this paper. The reported device has a stable single mode operation and a side mode suppression ratio of 37 dB. The laser is widely tunable and it can be fine-tuned. Moreover, the laser cavity is monolithically integrated with an active multimode interference reflector, and has a total length of 860 µm.

AB - A single mode laser based on novel deep etched V-notch reflectors is presented in this paper. The reported device has a stable single mode operation and a side mode suppression ratio of 37 dB. The laser is widely tunable and it can be fine-tuned. Moreover, the laser cavity is monolithically integrated with an active multimode interference reflector, and has a total length of 860 µm.

KW - InP

KW - Semiconductor laser

KW - single mode laser

UR - https://www.scopus.com/pages/publications/85019608677

U2 - 10.1080/09500340.2017.1327621

DO - 10.1080/09500340.2017.1327621

M3 - Article

AN - SCOPUS:85019608677

SN - 0950-0340

VL - 64

SP - 1941

EP - 1946

JO - Journal of Modern Optics

JF - Journal of Modern Optics

IS - 19

ER -

Single facet semiconductor laser with deep etched V-notch reflectors integrated with an active multimode interference reflector

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Keywords

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