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Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy
Duc V. Dinh
, M. Conroy
,
V. Z. Zubialevich
, N. Petkov
,
J. D. Holmes
,
P. J. Parbrook
Tyndall
School of Chemistry
School of Engineering and Architecture
Tyndall Photonics
University College Cork
Trinity College Dublin
Research output
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Dive into the research topics of 'Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy'. Together they form a unique fingerprint.
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Material Science
Aluminum Nitride
100%
Vapor Phase Epitaxy
100%
Sapphire
100%
Surface Roughness
33%
Density
16%
Transmission Electron Microscopy
16%
Atomic Force Microscopy
16%
Crystal Defect
16%
Nitriding
16%
Buffer Layer
16%
X-Ray Diffractogram
16%
Physics
Metalorganic Vapor Phase Epitaxy
100%
Surface Roughness
100%
Transmission Electron Microscopy
50%
Atomic Force Microscopy
50%
Crystal Defect
50%
X-Ray Diffractogram
50%
Engineering
Crystal Quality
100%
Sapphire Substrate
50%
Atomic Force Microscopy
50%
Buffer Layer
50%
Full width at half maximum
50%