@inbook{0d238a36a6674d2b9a62e59e71668793,
title = "Si/SiGe terahertz quantum cascade emitters",
abstract = "While there are many potential applications forTHz radiation including medical imaging, pollution monitoring, security screening and bioweapons detection1, this part of the electromagnetic spectrum has been under ultilised due to a lack of cheap and practical sources and detectors. III-V quantum cascades lasers have recently been demonstrated at a number of THz frequencies but only operate below 150 K2. Si/SiGe quantum cascade lasers if realised could potentially have a number of significant advantages. The nature of the Si-Ge bond results in negligible polar optical phonon scattering which produces significantly enhanced intersubband lifetimes with almost no reduction in lifetime up to room temperature. The lifetimes in III-V materials demonstrate polar optical phonon scattering dominating above only 40 K.",
author = "Paul, \{D. J.\} and Lynch, \{S. A.\} and P. Townsend and Z. Ikonic and Kelsall, \{R. W.\} and P. Harrison and Liew, \{S. L.\} and Norris, \{D. J.\} and Cullis, \{A. G.\} and J. Zhang and Gamble, \{H. S.\} and Tribe, \{W. R.\} and Arnone, \{D. D.\}",
year = "2003",
doi = "10.1109/ISDRS.2003.1271976",
language = "English",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "20--21",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
address = "United States",
note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",
}