Soft breakdown in MgO dielectric layers

E. Miranda; E. O'Connor; G. Hughes; P. Casey; K. Cherkaoui; S. Monaghan; R. Long; D. O'Connell; P. K. Hurley

doi:10.1109/IRPS.2009.5173330

Soft breakdown in MgO dielectric layers

E. Miranda
, E. O'Connor
, G. Hughes
, P. Casey
, K. Cherkaoui
, S. Monaghan
, R. Long
, D. O'Connell
, P. K. Hurley

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In this work, we report on the occurrence of the soft breakdown (SBD) failure mode in 20nm-thick films of magnesium oxide (MgO) grown on Si substrates. To our knowledge, this is the first observation of this failure mechanism in a high-κ gate dielectric with such a large oxide thickness. We show that the I-V characteristics follow the power-law dependence typical of SBD conduction in a wider voltage range than that reported for SiO₂. We pay special attention to the relationship between the magnitude of the current and the normalized differential conductance, and analyze the role played by the injection polarity and substrate type.

Original language	English
Title of host publication	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages	688-691
Number of pages	4
DOIs	https://doi.org/10.1109/IRPS.2009.5173330 https://doi.org/10.1109/IRPS.2009.5173330
Publication status	Published - 2009
Event	2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada Duration: 26 Apr 2009 → 30 Apr 2009

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Country/Territory	Canada
City	Montreal, QC
Period	26/04/09 → 30/04/09

Keywords

Breakdown
High-κ
MgO

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Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D., & Hurley, P. K. (2009). Soft breakdown in MgO dielectric layers. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 688-691). Article 5173330 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173330, https://doi.org/10.1109/IRPS.2009.5173330

@inproceedings{98d0bcf4e61e41aa9a60605d459ae359,

title = "Soft breakdown in MgO dielectric layers",

abstract = "In this work, we report on the occurrence of the soft breakdown (SBD) failure mode in 20nm-thick films of magnesium oxide (MgO) grown on Si substrates. To our knowledge, this is the first observation of this failure mechanism in a high-κ gate dielectric with such a large oxide thickness. We show that the I-V characteristics follow the power-law dependence typical of SBD conduction in a wider voltage range than that reported for SiO2. We pay special attention to the relationship between the magnitude of the current and the normalized differential conductance, and analyze the role played by the injection polarity and substrate type.",

keywords = "Breakdown, High-κ, MgO",

author = "E. Miranda and E. O'Connor and G. Hughes and P. Casey and K. Cherkaoui and S. Monaghan and R. Long and D. O'Connell and Hurley, \{P. K.\}",

year = "2009",

doi = "10.1109/IRPS.2009.5173330",

language = "English",

isbn = "0780388038",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "688--691",

booktitle = "2009 IEEE International Reliability Physics Symposium, IRPS 2009",

note = "2009 IEEE International Reliability Physics Symposium, IRPS 2009 ; Conference date: 26-04-2009 Through 30-04-2009",

}

Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K , Monaghan, S, Long, R, O'Connell, D & Hurley, PK 2009, Soft breakdown in MgO dielectric layers. in 2009 IEEE International Reliability Physics Symposium, IRPS 2009., 5173330, IEEE International Reliability Physics Symposium Proceedings, pp. 688-691, 2009 IEEE International Reliability Physics Symposium, IRPS 2009, Montreal, QC, Canada, 26/04/09. https://doi.org/10.1109/IRPS.2009.5173330, https://doi.org/10.1109/IRPS.2009.5173330

TY - GEN

T1 - Soft breakdown in MgO dielectric layers

AU - Miranda, E.

AU - O'Connor, E.

AU - Hughes, G.

AU - Casey, P.

AU - Cherkaoui, K.

AU - Monaghan, S.

AU - Long, R.

AU - O'Connell, D.

AU - Hurley, P. K.

PY - 2009

Y1 - 2009

N2 - In this work, we report on the occurrence of the soft breakdown (SBD) failure mode in 20nm-thick films of magnesium oxide (MgO) grown on Si substrates. To our knowledge, this is the first observation of this failure mechanism in a high-κ gate dielectric with such a large oxide thickness. We show that the I-V characteristics follow the power-law dependence typical of SBD conduction in a wider voltage range than that reported for SiO2. We pay special attention to the relationship between the magnitude of the current and the normalized differential conductance, and analyze the role played by the injection polarity and substrate type.

AB - In this work, we report on the occurrence of the soft breakdown (SBD) failure mode in 20nm-thick films of magnesium oxide (MgO) grown on Si substrates. To our knowledge, this is the first observation of this failure mechanism in a high-κ gate dielectric with such a large oxide thickness. We show that the I-V characteristics follow the power-law dependence typical of SBD conduction in a wider voltage range than that reported for SiO2. We pay special attention to the relationship between the magnitude of the current and the normalized differential conductance, and analyze the role played by the injection polarity and substrate type.

KW - Breakdown

KW - High-κ

KW - MgO

UR - https://www.scopus.com/pages/publications/70449109108

U2 - 10.1109/IRPS.2009.5173330

DO - 10.1109/IRPS.2009.5173330

M3 - Conference proceeding

AN - SCOPUS:70449109108

SN - 0780388038

SN - 9780780388031

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 688

EP - 691

BT - 2009 IEEE International Reliability Physics Symposium, IRPS 2009

T2 - 2009 IEEE International Reliability Physics Symposium, IRPS 2009

Y2 - 26 April 2009 through 30 April 2009

ER -

Soft breakdown in MgO dielectric layers

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