SOI gated resistor: CMOS without junctions

J. P. Colinge; C. W. Lee; A. Afzalian; N. Dehdashti; R. Yan; I. Ferain; P. Razavi; B. O'Neill; A. Blake; M. White; A. M. Kelleher; B. McCarthy; R. Murphy

doi:10.1109/SOI.2009.5318737

SOI gated resistor: CMOS without junctions

J. P. Colinge
, C. W. Lee
, A. Afzalian
, N. Dehdashti
, R. Yan
, I. Ferain
, P. Razavi
, B. O'Neill
, A. Blake
, M. White
, A. M. Kelleher
, B. McCarthy
, R. Murphy

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

Original language	English
Title of host publication	2009 IEEE International SOI Conference
DOIs	https://doi.org/10.1109/SOI.2009.5318737
Publication status	Published - 2009
Event	2009 IEEE International SOI Conference - Foster City, CA, United States Duration: 5 Oct 2009 → 8 Oct 2009

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2009 IEEE International SOI Conference
Country/Territory	United States
City	Foster City, CA
Period	5/10/09 → 8/10/09

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10.1109/SOI.2009.5318737

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Colinge, J. P., Lee, C. W., Afzalian, A., Dehdashti, N., Yan, R., Ferain, I., Razavi, P., O'Neill, B., Blake, A., White, M., Kelleher, A. M., McCarthy, B., & Murphy, R. (2009). SOI gated resistor: CMOS without junctions. In 2009 IEEE International SOI Conference Article 5318737 (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2009.5318737

@inbook{dcc029c4afc74e0e85e40ad2e09bf4cb,

title = "SOI gated resistor: CMOS without junctions",

abstract = "We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.",

author = "Colinge, \{J. P.\} and Lee, \{C. W.\} and A. Afzalian and N. Dehdashti and R. Yan and I. Ferain and P. Razavi and B. O'Neill and A. Blake and M. White and Kelleher, \{A. M.\} and B. McCarthy and R. Murphy",

year = "2009",

doi = "10.1109/SOI.2009.5318737",

language = "English",

isbn = "9781424452323",

series = "Proceedings - IEEE International SOI Conference",

booktitle = "2009 IEEE International SOI Conference",

note = "2009 IEEE International SOI Conference ; Conference date: 05-10-2009 Through 08-10-2009",

}

Colinge, JP, Lee, CW, Afzalian, A, Dehdashti, N, Yan, R, Ferain, I, Razavi, P, O'Neill, B, Blake, A , White, M, Kelleher, AM, McCarthy, B & Murphy, R 2009, SOI gated resistor: CMOS without junctions. in 2009 IEEE International SOI Conference., 5318737, Proceedings - IEEE International SOI Conference, 2009 IEEE International SOI Conference, Foster City, CA, United States, 5/10/09. https://doi.org/10.1109/SOI.2009.5318737

TY - CHAP

T1 - SOI gated resistor

T2 - 2009 IEEE International SOI Conference

AU - Colinge, J. P.

AU - Lee, C. W.

AU - Afzalian, A.

AU - Dehdashti, N.

AU - Yan, R.

AU - Ferain, I.

AU - Razavi, P.

AU - O'Neill, B.

AU - Blake, A.

AU - White, M.

AU - Kelleher, A. M.

AU - McCarthy, B.

AU - Murphy, R.

PY - 2009

Y1 - 2009

N2 - We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

AB - We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

UR - https://www.scopus.com/pages/publications/72449129610

U2 - 10.1109/SOI.2009.5318737

DO - 10.1109/SOI.2009.5318737

M3 - Chapter

AN - SCOPUS:72449129610

SN - 9781424452323

T3 - Proceedings - IEEE International SOI Conference

BT - 2009 IEEE International SOI Conference

Y2 - 5 October 2009 through 8 October 2009

ER -

SOI gated resistor: CMOS without junctions

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