SOI materials for MOEMS obtained by silicon direct bonding technique

C. Dunare; I. Cernica; D. Popescu; A. Popescu; D. Cristea; M. Modreanu; E. Manea

SOI materials for MOEMS obtained by silicon direct bonding technique

C. Dunare
, I. Cernica
, D. Popescu
, A. Popescu
, D. Cristea
, M. Modreanu
, E. Manea

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper we propose a new technology to obtain SOI (silicon - on - isolator) substrates. This new technology is based on silicon direct bonding techniques using hydrophilic surfaces. The obtained substrates can be used in MOEMS for ingression of light sources. This method is high versatile and provides a high degree flexibility in materials integration.

Original language	English
Pages	531-534
Number of pages	4
Publication status	Published - 2000
Externally published	Yes
Event	2000 International Semiconductor Conference - Sinaia, Romania Duration: 10 Oct 2000 → 14 Oct 2000

Conference

Conference	2000 International Semiconductor Conference
Country/Territory	Romania
City	Sinaia
Period	10/10/00 → 14/10/00

Cite this

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title = "SOI materials for MOEMS obtained by silicon direct bonding technique",

abstract = "In this paper we propose a new technology to obtain SOI (silicon - on - isolator) substrates. This new technology is based on silicon direct bonding techniques using hydrophilic surfaces. The obtained substrates can be used in MOEMS for ingression of light sources. This method is high versatile and provides a high degree flexibility in materials integration.",

author = "C. Dunare and I. Cernica and D. Popescu and A. Popescu and D. Cristea and M. Modreanu and E. Manea",

year = "2000",

language = "English",

pages = "531--534",

note = "2000 International Semiconductor Conference ; Conference date: 10-10-2000 Through 14-10-2000",

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TY - CONF

T1 - SOI materials for MOEMS obtained by silicon direct bonding technique

AU - Dunare, C.

AU - Cernica, I.

AU - Popescu, D.

AU - Popescu, A.

AU - Cristea, D.

AU - Modreanu, M.

AU - Manea, E.

PY - 2000

Y1 - 2000

N2 - In this paper we propose a new technology to obtain SOI (silicon - on - isolator) substrates. This new technology is based on silicon direct bonding techniques using hydrophilic surfaces. The obtained substrates can be used in MOEMS for ingression of light sources. This method is high versatile and provides a high degree flexibility in materials integration.

AB - In this paper we propose a new technology to obtain SOI (silicon - on - isolator) substrates. This new technology is based on silicon direct bonding techniques using hydrophilic surfaces. The obtained substrates can be used in MOEMS for ingression of light sources. This method is high versatile and provides a high degree flexibility in materials integration.

UR - https://www.scopus.com/pages/publications/0034449841

M3 - Paper

AN - SCOPUS:0034449841

SP - 531

EP - 534

T2 - 2000 International Semiconductor Conference

Y2 - 10 October 2000 through 14 October 2000

ER -

SOI materials for MOEMS obtained by silicon direct bonding technique

Abstract

Conference

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