@misc{bf28fdd4cbf24a25be7f11de8c788e17,
title = "Sol-gel fabrication of PZT thick films for MEMS",
abstract = "Pb(ZrxTi1-x)O3 (PZT) sol (≧0.6M) was spun onto platinised silicon substrate. The single layer thickness of a dense, crack-free film up to 500 nm could be obtained. It was found that the key factor in obtaining thick crack-free films was to choose an appropriate heating profile, using a method based on the wafer deflection measurement. By using the temperature profile to thermally treat each single layer, it was possible to obtain thick crack-free films by repeatedly spin-coating. The dielectric and piezoelectric properties of the films with different thicknesses and orientations were measured and compared.",
keywords = "Piezoelectric, PZT, Sol-gel, Thick film",
author = "S. Corkovic and Whatmore, \{R. W.\} and Q. Zhang",
year = "2007",
doi = "10.1080/10584580601099025",
language = "English",
volume = "88",
series = "Integrated Ferroelectrics",
publisher = "Taylor and Francis Ltd.",
edition = "1",
type = "Other",
}