Abstract
Injection profiled broad-area edge-emitting semiconductor lasers demonstrate single transverse mode operation and near-diffraction-limited beam output when driven by pulsed pump current. Thermal effects arising from CW operation induce filamentary dynamics, thus degrading the beam. Transition from the stable nonthermal to the unstable CW regime is analyzed experimentally and numerically, and techniques to improve beam quality in the thermal regime, based on feedback or thermal profiling, are proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 40 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2004 |
| Externally published | Yes |
Keywords
- Gain tailoring
- High power
- Semiconductor laser
- Thermal lensing