Spectral characteristics of single-In0.7Ga0.3As quantum-well microring lasers

B. Corbett

doi:10.1109/68.651079

Spectral characteristics of single-In_0.7Ga_0.3As quantum-well microring lasers

B. Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

Low-threshold optically pumped microring and disk lasers containing a single compressive strained In_0.7Ga_0.3As quantum well are characterized. Strong bandfilling in single quantum wells is used to show saturation of the background spontaneous emission in microrings compared with comparable microdisks. The continuous wave threshold pump power for a microring is as low as 2 _μW (3 W/cm²) at liquid nitrogen temperatures. The lasers operate multimoded with wavelengths determined by whispering gallery modes of several orders.

Original language	English
Pages (from-to)	3-5
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1109/68.651079
Publication status	Published - Jan 1998

Keywords

GaInAsP-InP
Quantum-well device
Ring laser
Semiconductor lasers
Spectral analysis

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10.1109/68.651079

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abstract = "Low-threshold optically pumped microring and disk lasers containing a single compressive strained In0.7Ga0.3As quantum well are characterized. Strong bandfilling in single quantum wells is used to show saturation of the background spontaneous emission in microrings compared with comparable microdisks. The continuous wave threshold pump power for a microring is as low as 2 μW (3 W/cm2) at liquid nitrogen temperatures. The lasers operate multimoded with wavelengths determined by whispering gallery modes of several orders.",

keywords = "GaInAsP-InP, Quantum-well device, Ring laser, Semiconductor lasers, Spectral analysis",

author = "B. Corbett",

year = "1998",

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AB - Low-threshold optically pumped microring and disk lasers containing a single compressive strained In0.7Ga0.3As quantum well are characterized. Strong bandfilling in single quantum wells is used to show saturation of the background spontaneous emission in microrings compared with comparable microdisks. The continuous wave threshold pump power for a microring is as low as 2 μW (3 W/cm2) at liquid nitrogen temperatures. The lasers operate multimoded with wavelengths determined by whispering gallery modes of several orders.

KW - GaInAsP-InP

KW - Quantum-well device

KW - Ring laser

KW - Semiconductor lasers

KW - Spectral analysis

UR - https://www.scopus.com/pages/publications/0031671937

U2 - 10.1109/68.651079

DO - 10.1109/68.651079

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ER -

Spectral characteristics of single-In_0.7Ga_0.3As quantum-well microring lasers

Abstract

Keywords

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