Spin polarized photoemission from thin GaAs photocathodes

E. Pelucchi; S. De Rossi; F. Ciccacci

doi:10.1016/0368-2048(95)02510-3

Spin polarized photoemission from thin GaAs photocathodes

E. Pelucchi
, S. De Rossi
, F. Ciccacci

Polytechnic University of Milan

Research output: Contribution to journal › Article › peer-review

Abstract

The spin polarization of electrons photoemitted from negative electron affinity (NEA) thin GaAs photocathodes has been measured by means of Mott scattering. Thin epitaxial layers have been grown on different substrates with either small or large lattice mis-match. In this last case the layer results considerably strained allowing the emission of highly (more than 50%) polarized electrons. The effect of the strain relaxation due to sample annealing on the beam polarization is also discussed.

Original language	English
Pages (from-to)	505-509
Number of pages	5
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	76
Issue number	C
DOIs	https://doi.org/10.1016/0368-2048(95)02510-3
Publication status	Published - 29 Dec 1995
Externally published	Yes

Access to Document

10.1016/0368-2048(95)02510-3

Cite this

@article{3ca3389b80a74aa0b6fb1b0d93c1004e,

title = "Spin polarized photoemission from thin GaAs photocathodes",

abstract = "The spin polarization of electrons photoemitted from negative electron affinity (NEA) thin GaAs photocathodes has been measured by means of Mott scattering. Thin epitaxial layers have been grown on different substrates with either small or large lattice mis-match. In this last case the layer results considerably strained allowing the emission of highly (more than 50\%) polarized electrons. The effect of the strain relaxation due to sample annealing on the beam polarization is also discussed.",

author = "E. Pelucchi and \{De Rossi\}, S. and F. Ciccacci",

year = "1995",

month = dec,

day = "29",

doi = "10.1016/0368-2048(95)02510-3",

language = "English",

volume = "76",

pages = "505--509",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier B.V.",

number = "C",

}

TY - JOUR

T1 - Spin polarized photoemission from thin GaAs photocathodes

AU - Pelucchi, E.

AU - De Rossi, S.

AU - Ciccacci, F.

PY - 1995/12/29

Y1 - 1995/12/29

N2 - The spin polarization of electrons photoemitted from negative electron affinity (NEA) thin GaAs photocathodes has been measured by means of Mott scattering. Thin epitaxial layers have been grown on different substrates with either small or large lattice mis-match. In this last case the layer results considerably strained allowing the emission of highly (more than 50%) polarized electrons. The effect of the strain relaxation due to sample annealing on the beam polarization is also discussed.

AB - The spin polarization of electrons photoemitted from negative electron affinity (NEA) thin GaAs photocathodes has been measured by means of Mott scattering. Thin epitaxial layers have been grown on different substrates with either small or large lattice mis-match. In this last case the layer results considerably strained allowing the emission of highly (more than 50%) polarized electrons. The effect of the strain relaxation due to sample annealing on the beam polarization is also discussed.

UR - https://www.scopus.com/pages/publications/0008371170

U2 - 10.1016/0368-2048(95)02510-3

DO - 10.1016/0368-2048(95)02510-3

M3 - Article

AN - SCOPUS:0008371170

SN - 0368-2048

VL - 76

SP - 505

EP - 509

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - C

ER -

Spin polarized photoemission from thin GaAs photocathodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this