Sr doped Cu2O a new p-type material for photovoltaic applications

Mihai Stoica; Mihai Anastasescu; Jose M. Calderon-Moreno; Madalina Nicolescu; Petre Osiceanu; Silviu Preda; Maria Covei Duta; Mircea Modreanu; Mariuca Gartner

Sr doped Cu₂O a new p-type material for photovoltaic applications

Mihai Stoica
, Mihai Anastasescu
, Jose M. Calderon-Moreno
, Madalina Nicolescu
, Petre Osiceanu
, Silviu Preda
, Maria Covei Duta
, Mircea Modreanu
, Mariuca Gartner

Institute of Physical Chemistry, Romanian Academy of Sciences
Transilvania University of Brasov

Research output: Contribution to journal › Article › peer-review

Abstract

A new class of transparent conductive oxides, namely Sr doped Cu₂O (Cu₂O-Sr) thin films, have been deposited by Metal Organic Chemical Vapor Deposition (MOCVD) method on glass substrate with 3:1 and 1:1 Sr:Cu molar ratios. The Cu₂O-Sr samples were investigated related to structure (X-Ray Diffraction, and Raman Spectroscopy), morphology (AFM and SEM), chemical composition (XPS), optical properties (Spectroscopic Ellipsometry and UV-VIS Spectroscopy) and electrical properties (Hall Effect) in comparison with undoped Cu₂O films. The obtained films are adherent and uniform with a thickness in the range of 170-200 nm and exhibit optical transparency of over 80% in the VIS-NIR domain. Besides XPS, the presence of Sr in the films matrix was evidenced by Raman Spectroscopy and Infrared Ellipsometry. Hall Effect measurements emphasized the p-type electrical conductivity of the Cu₂O-Sr films, with carrier concentration in the range of 1016-1017 cm^-3. The optical constants of the Cu₂O-Sr films were obtained over a wide wavelengths range.

Original language	English
Pages (from-to)	425-435
Number of pages	11
Journal	Revue Roumaine de Chimie
Volume	63
Issue number	5-6
Publication status	Published - 2018

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SDG 7 Affordable and Clean Energy

Cite this

@article{dc1dd265284c4f5aa20cd6d36d678101,

title = "Sr doped Cu2O a new p-type material for photovoltaic applications",

abstract = "A new class of transparent conductive oxides, namely Sr doped Cu2O (Cu2O-Sr) thin films, have been deposited by Metal Organic Chemical Vapor Deposition (MOCVD) method on glass substrate with 3:1 and 1:1 Sr:Cu molar ratios. The Cu2O-Sr samples were investigated related to structure (X-Ray Diffraction, and Raman Spectroscopy), morphology (AFM and SEM), chemical composition (XPS), optical properties (Spectroscopic Ellipsometry and UV-VIS Spectroscopy) and electrical properties (Hall Effect) in comparison with undoped Cu2O films. The obtained films are adherent and uniform with a thickness in the range of 170-200 nm and exhibit optical transparency of over 80\% in the VIS-NIR domain. Besides XPS, the presence of Sr in the films matrix was evidenced by Raman Spectroscopy and Infrared Ellipsometry. Hall Effect measurements emphasized the p-type electrical conductivity of the Cu2O-Sr films, with carrier concentration in the range of 1016-1017 cm-3. The optical constants of the Cu2O-Sr films were obtained over a wide wavelengths range.",

author = "Mihai Stoica and Mihai Anastasescu and Calderon-Moreno, \{Jose M.\} and Madalina Nicolescu and Petre Osiceanu and Silviu Preda and Duta, \{Maria Covei\} and Mircea Modreanu and Mariuca Gartner",

year = "2018",

language = "English",

volume = "63",

pages = "425--435",

journal = "Revue Roumaine de Chimie",

issn = "0035-3930",

publisher = "Editions de l'Academie Republique Populaire",

number = "5-6",

}

TY - JOUR

T1 - Sr doped Cu2O a new p-type material for photovoltaic applications

AU - Stoica, Mihai

AU - Anastasescu, Mihai

AU - Calderon-Moreno, Jose M.

AU - Nicolescu, Madalina

AU - Osiceanu, Petre

AU - Preda, Silviu

AU - Duta, Maria Covei

AU - Modreanu, Mircea

AU - Gartner, Mariuca

PY - 2018

Y1 - 2018

N2 - A new class of transparent conductive oxides, namely Sr doped Cu2O (Cu2O-Sr) thin films, have been deposited by Metal Organic Chemical Vapor Deposition (MOCVD) method on glass substrate with 3:1 and 1:1 Sr:Cu molar ratios. The Cu2O-Sr samples were investigated related to structure (X-Ray Diffraction, and Raman Spectroscopy), morphology (AFM and SEM), chemical composition (XPS), optical properties (Spectroscopic Ellipsometry and UV-VIS Spectroscopy) and electrical properties (Hall Effect) in comparison with undoped Cu2O films. The obtained films are adherent and uniform with a thickness in the range of 170-200 nm and exhibit optical transparency of over 80% in the VIS-NIR domain. Besides XPS, the presence of Sr in the films matrix was evidenced by Raman Spectroscopy and Infrared Ellipsometry. Hall Effect measurements emphasized the p-type electrical conductivity of the Cu2O-Sr films, with carrier concentration in the range of 1016-1017 cm-3. The optical constants of the Cu2O-Sr films were obtained over a wide wavelengths range.

AB - A new class of transparent conductive oxides, namely Sr doped Cu2O (Cu2O-Sr) thin films, have been deposited by Metal Organic Chemical Vapor Deposition (MOCVD) method on glass substrate with 3:1 and 1:1 Sr:Cu molar ratios. The Cu2O-Sr samples were investigated related to structure (X-Ray Diffraction, and Raman Spectroscopy), morphology (AFM and SEM), chemical composition (XPS), optical properties (Spectroscopic Ellipsometry and UV-VIS Spectroscopy) and electrical properties (Hall Effect) in comparison with undoped Cu2O films. The obtained films are adherent and uniform with a thickness in the range of 170-200 nm and exhibit optical transparency of over 80% in the VIS-NIR domain. Besides XPS, the presence of Sr in the films matrix was evidenced by Raman Spectroscopy and Infrared Ellipsometry. Hall Effect measurements emphasized the p-type electrical conductivity of the Cu2O-Sr films, with carrier concentration in the range of 1016-1017 cm-3. The optical constants of the Cu2O-Sr films were obtained over a wide wavelengths range.

UR - https://www.scopus.com/pages/publications/85054540431

M3 - Article

AN - SCOPUS:85054540431

SN - 0035-3930

VL - 63

SP - 425

EP - 435

JO - Revue Roumaine de Chimie

JF - Revue Roumaine de Chimie

IS - 5-6

ER -

Sr doped Cu₂O a new p-type material for photovoltaic applications

Abstract

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