Abstract
Stabilization of self-focusing in wide-aperture semiconductor lasers was analyzed. The mechanism occurred when the carrier density was profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode which operated in pulsed mode to avoid thermal guiding effects. The injection current profile was changed from the step-function case to a Lorentzian-like profile by including a 10 μm p-type epitaxial spreading layer. The resulting nonlinear transverse mode and the possibility of its observation in two transverse dimensions was also discussed.
| Original language | English |
|---|---|
| Article number | 053807 |
| Pages (from-to) | 538071-538075 |
| Number of pages | 5 |
| Journal | Physical Review A - Atomic, Molecular, and Optical Physics |
| Volume | 65 |
| Issue number | 5 B |
| Publication status | Published - May 2002 |