Statistical characterization of 0.18 μm low-power CMOS process using efficient parameter extraction

Research output: Contribution to conferencePaperpeer-review

Abstract

This paper illustrates the use of an efficient parameter extraction strategy for MOS Model 9 to perform a statistical analysis of sample devices from a 0.18μm CMOS process. The parameter extraction strategy allows all the parameters for a particular device geometry to be extracted from just 50 measurements. These parameters are subsequently used with Principal Component Analysis to provide best-case or worst-case model sets or as inputs to a Monte-Carlo experiment to investigate some of the performance trade-offs of the process.

Original languageEnglish
Pages127-131
Number of pages5
Publication statusPublished - 1998
EventProceedings of the 1998 IEEE International Conference on Microelectronic Test Structures - Kanazawa, Jpn
Duration: 23 Mar 199826 Mar 1998

Conference

ConferenceProceedings of the 1998 IEEE International Conference on Microelectronic Test Structures
CityKanazawa, Jpn
Period23/03/9826/03/98

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