Abstract
This paper illustrates the use of an efficient parameter extraction strategy for MOS Model 9 to perform a statistical analysis of sample devices from a 0.18μm CMOS process. The parameter extraction strategy allows all the parameters for a particular device geometry to be extracted from just 50 measurements. These parameters are subsequently used with Principal Component Analysis to provide best-case or worst-case model sets or as inputs to a Monte-Carlo experiment to investigate some of the performance trade-offs of the process.
| Original language | English |
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| Pages | 127-131 |
| Number of pages | 5 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1998 IEEE International Conference on Microelectronic Test Structures - Kanazawa, Jpn Duration: 23 Mar 1998 → 26 Mar 1998 |
Conference
| Conference | Proceedings of the 1998 IEEE International Conference on Microelectronic Test Structures |
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| City | Kanazawa, Jpn |
| Period | 23/03/98 → 26/03/98 |