@inproceedings{2bc771d7a1964284b7fd3933d5fc8efe,
title = "Statistical hot-carrier reliability simulation using a novel sPICE parameter evolution model",
abstract = "One of the key components in any circuit reliability simulation methodology is a strategy for predicting the hot-carrierinduced changes in device parameters during stress. In the context of SPICE MOSFET model parameter shifts, the parameter extraction methodology utilised contributes to the {"}ease{"} in which parameter degradation trends can be modelled. This paper will demonstrate that direct parameter extraction techniques produce more monotonic parameter degradation trends than conventional optimisation techniques. In addition, a novel approach for the modelling of the evolution of directly-extracted parameters during hot-carrier stress is presented. Finally, a statistical validation, comparing measured and simulated degraded ring oscillator data, is presented.",
author = "S. Minehane and McCarthy, \{K. G.\} and P. O'Sullivan and A. Mathewson",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",
year = "2000",
doi = "10.1109/ESSDERC.2000.194853",
language = "English",
isbn = "9782863322482",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "616--619",
editor = "H. Grunbacher and Crean, \{Gabriel M.\} and Lane, \{W. A.\} and McCabe, \{Frank A.\}",
booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",
address = "United States",
}