Stimulated emission and carrier dynamics in AlInGaN multi quantum wells

S. A. Hashemizadeh; J. P.R. Wells; J. Brown; P. Murzyn; B. D. Jones; T. Wang; P. J. Parbrook; A. M. Fox; D. J. Mowbray; M. S. Skolnick

doi:10.1002/pssc.200565370

Stimulated emission and carrier dynamics in AlInGaN multi quantum wells

S. A. Hashemizadeh
, J. P.R. Wells
, J. Brown
, P. Murzyn
, B. D. Jones
, T. Wang
, P. J. Parbrook
, A. M. Fox
, D. J. Mowbray
, M. S. Skolnick

University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

Pump-probe measurements resonant with the lowest energy transition of 2 nm thick AlInGaN multiple quantum wells show fast decay components between 3 to 21 ps from stimulated emission. On a slower timescale contributions from spontaneous recombination of carriers are also observed. The inferred threshold for stimulated emission is near 50 μJ/cm².

Original language	English
Pages (from-to)	1958-1961
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565370
Publication status	Published - 2006
Externally published	Yes
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 28 Aug 2005 → 2 Sep 2005

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10.1002/pssc.200565370

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@article{6e729bfdb4ac4af087ee512300577d00,

title = "Stimulated emission and carrier dynamics in AlInGaN multi quantum wells",

abstract = "Pump-probe measurements resonant with the lowest energy transition of 2 nm thick AlInGaN multiple quantum wells show fast decay components between 3 to 21 ps from stimulated emission. On a slower timescale contributions from spontaneous recombination of carriers are also observed. The inferred threshold for stimulated emission is near 50 μJ/cm2.",

author = "Hashemizadeh, \{S. A.\} and Wells, \{J. P.R.\} and J. Brown and P. Murzyn and Jones, \{B. D.\} and T. Wang and Parbrook, \{P. J.\} and Fox, \{A. M.\} and Mowbray, \{D. J.\} and Skolnick, \{M. S.\}",

year = "2006",

doi = "10.1002/pssc.200565370",

language = "English",

volume = "3",

pages = "1958--1961",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - Stimulated emission and carrier dynamics in AlInGaN multi quantum wells

AU - Hashemizadeh, S. A.

AU - Wells, J. P.R.

AU - Brown, J.

AU - Murzyn, P.

AU - Jones, B. D.

AU - Wang, T.

AU - Parbrook, P. J.

AU - Fox, A. M.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2006

Y1 - 2006

N2 - Pump-probe measurements resonant with the lowest energy transition of 2 nm thick AlInGaN multiple quantum wells show fast decay components between 3 to 21 ps from stimulated emission. On a slower timescale contributions from spontaneous recombination of carriers are also observed. The inferred threshold for stimulated emission is near 50 μJ/cm2.

AB - Pump-probe measurements resonant with the lowest energy transition of 2 nm thick AlInGaN multiple quantum wells show fast decay components between 3 to 21 ps from stimulated emission. On a slower timescale contributions from spontaneous recombination of carriers are also observed. The inferred threshold for stimulated emission is near 50 μJ/cm2.

UR - https://www.scopus.com/pages/publications/33746352374

U2 - 10.1002/pssc.200565370

DO - 10.1002/pssc.200565370

M3 - Article

AN - SCOPUS:33746352374

SN - 1862-6351

VL - 3

SP - 1958

EP - 1961

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Stimulated emission and carrier dynamics in AlInGaN multi quantum wells

Abstract

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