Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics

Christopher A. Broderick; Wanshu Xiong; Shirong Jin; Igor P. Marko; Zoe L. Bushell; Konstanze Hild; Peter Ludewig; Wolfgang Stolz; Kerstin Volz; Judy M. Rorison; Stephen J. Sweeney; Eoin P. O'reilly

doi:10.1109/NUSOD.2017.8010018

Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics

Christopher A. Broderick
, Wanshu Xiong
, Shirong Jin
, Igor P. Marko
, Zoe L. Bushell
, Konstanze Hild
, Peter Ludewig
, Wolfgang Stolz
, Kerstin Volz
, Judy M. Rorison
, Stephen J. Sweeney
, Eoin P. O'reilly

School of Physics

University of Bristol
University of Surrey
University of Marburg

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We present a theoretical analysis of the optoelectronic properties of type-II GaAs_1-xBi_x/GaN_yAs_1-y quantum wells (QWs) grown on GaAs substrates. We eludicate the broad scope for band structure engineering in these novel heterostructures, demonstrating that they offer emission and absorption out to mid-infrared wavelengths in structures which can be grown with little or no net strain relative to GaAs. We confirm our analysis by comparing to experiments on a prototype GaAs_0.967Bi_0.033/GaN_0.062As_0.938 structure, which show room temperature photoluminescence (PL) and absorption at a wavelength of 1.72 μm (one of the longest achieved to date from a pseudomorphic GaAs-based heterostructure). Overall, we demonstrate that this new class of type-II QWs has significant promise for (i) extending the wavelength range accessible to the GaAs material platform, and (ii) the development of long-wavelength photonic devices and highly efficient solar cells.

Original language	English
Title of host publication	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Editors	Morten Willatzen, Joachim Piprek
Publisher	IEEE Computer Society
Pages	115-116
Number of pages	2
ISBN (Electronic)	9781509053230
DOIs	https://doi.org/10.1109/NUSOD.2017.8010018
Publication status	Published - 11 Aug 2017
Event	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark Duration: 24 Jul 2017 → 28 Jul 2017

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
ISSN (Print)	2158-3234

Conference

Conference	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Country/Territory	Denmark
City	Copenhagen
Period	24/07/17 → 28/07/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/NUSOD.2017.8010018

Cite this

Broderick, C. A., Xiong, W., Jin, S., Marko, I. P., Bushell, Z. L., Hild, K., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., Sweeney, S. J., & O'reilly, E. P. (2017). Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics. In M. Willatzen, & J. Piprek (Eds.), 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 (pp. 115-116). Article 8010018 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD). IEEE Computer Society. https://doi.org/10.1109/NUSOD.2017.8010018

Broderick, Christopher A. ; Xiong, Wanshu ; Jin, Shirong et al. / Strain-balanced type-II superlattices on GaAs : Novel heterostructures for photonics and photovoltaics. 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. editor / Morten Willatzen ; Joachim Piprek. IEEE Computer Society, 2017. pp. 115-116 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD).

@inproceedings{5d8b247940cb495bb4a648c1451e31fc,

title = "Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics",

abstract = "We present a theoretical analysis of the optoelectronic properties of type-II GaAs1-xBix/GaNyAs1-y quantum wells (QWs) grown on GaAs substrates. We eludicate the broad scope for band structure engineering in these novel heterostructures, demonstrating that they offer emission and absorption out to mid-infrared wavelengths in structures which can be grown with little or no net strain relative to GaAs. We confirm our analysis by comparing to experiments on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, which show room temperature photoluminescence (PL) and absorption at a wavelength of 1.72 μm (one of the longest achieved to date from a pseudomorphic GaAs-based heterostructure). Overall, we demonstrate that this new class of type-II QWs has significant promise for (i) extending the wavelength range accessible to the GaAs material platform, and (ii) the development of long-wavelength photonic devices and highly efficient solar cells.",

author = "Broderick, \{Christopher A.\} and Wanshu Xiong and Shirong Jin and Marko, \{Igor P.\} and Bushell, \{Zoe L.\} and Konstanze Hild and Peter Ludewig and Wolfgang Stolz and Kerstin Volz and Rorison, \{Judy M.\} and Sweeney, \{Stephen J.\} and O'reilly, \{Eoin P.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 ; Conference date: 24-07-2017 Through 28-07-2017",

year = "2017",

month = aug,

day = "11",

doi = "10.1109/NUSOD.2017.8010018",

language = "English",

series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

publisher = "IEEE Computer Society",

pages = "115--116",

editor = "Morten Willatzen and Joachim Piprek",

booktitle = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017",

address = "United States",

}

Broderick, CA, Xiong, W, Jin, S, Marko, IP, Bushell, ZL, Hild, K, Ludewig, P, Stolz, W, Volz, K, Rorison, JM, Sweeney, SJ & O'reilly, EP 2017, Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics. in M Willatzen & J Piprek (eds), 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017., 8010018, Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD, IEEE Computer Society, pp. 115-116, 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, Copenhagen, Denmark, 24/07/17. https://doi.org/10.1109/NUSOD.2017.8010018

Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics. / Broderick, Christopher A.; Xiong, Wanshu; Jin, Shirong et al.
17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. ed. / Morten Willatzen; Joachim Piprek. IEEE Computer Society, 2017. p. 115-116 8010018 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Strain-balanced type-II superlattices on GaAs

T2 - 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017

AU - Broderick, Christopher A.

AU - Xiong, Wanshu

AU - Jin, Shirong

AU - Marko, Igor P.

AU - Bushell, Zoe L.

AU - Hild, Konstanze

AU - Ludewig, Peter

AU - Stolz, Wolfgang

AU - Volz, Kerstin

AU - Rorison, Judy M.

AU - Sweeney, Stephen J.

AU - O'reilly, Eoin P.

PY - 2017/8/11

Y1 - 2017/8/11

N2 - We present a theoretical analysis of the optoelectronic properties of type-II GaAs1-xBix/GaNyAs1-y quantum wells (QWs) grown on GaAs substrates. We eludicate the broad scope for band structure engineering in these novel heterostructures, demonstrating that they offer emission and absorption out to mid-infrared wavelengths in structures which can be grown with little or no net strain relative to GaAs. We confirm our analysis by comparing to experiments on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, which show room temperature photoluminescence (PL) and absorption at a wavelength of 1.72 μm (one of the longest achieved to date from a pseudomorphic GaAs-based heterostructure). Overall, we demonstrate that this new class of type-II QWs has significant promise for (i) extending the wavelength range accessible to the GaAs material platform, and (ii) the development of long-wavelength photonic devices and highly efficient solar cells.

AB - We present a theoretical analysis of the optoelectronic properties of type-II GaAs1-xBix/GaNyAs1-y quantum wells (QWs) grown on GaAs substrates. We eludicate the broad scope for band structure engineering in these novel heterostructures, demonstrating that they offer emission and absorption out to mid-infrared wavelengths in structures which can be grown with little or no net strain relative to GaAs. We confirm our analysis by comparing to experiments on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, which show room temperature photoluminescence (PL) and absorption at a wavelength of 1.72 μm (one of the longest achieved to date from a pseudomorphic GaAs-based heterostructure). Overall, we demonstrate that this new class of type-II QWs has significant promise for (i) extending the wavelength range accessible to the GaAs material platform, and (ii) the development of long-wavelength photonic devices and highly efficient solar cells.

UR - https://www.scopus.com/pages/publications/85028612119

U2 - 10.1109/NUSOD.2017.8010018

DO - 10.1109/NUSOD.2017.8010018

M3 - Conference proceeding

AN - SCOPUS:85028612119

T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

SP - 115

EP - 116

BT - 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017

A2 - Willatzen, Morten

A2 - Piprek, Joachim

PB - IEEE Computer Society

Y2 - 24 July 2017 through 28 July 2017

ER -

Broderick CA, Xiong W, Jin S, Marko IP, Bushell ZL, Hild K et al. Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics. In Willatzen M, Piprek J, editors, 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. IEEE Computer Society. 2017. p. 115-116. 8010018. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD). doi: 10.1109/NUSOD.2017.8010018

Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics

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