Strain-compensated type-II GaAs1−xBix/GaNyAs1−y “W” quantum wells for GaAs-based telecom lasers

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

We theoretically analyse strain-compensated GaAs1−xBix/GaNyAs1−y “W-type” quantum wells, demonstrating a viable approach to achieve efficient GaAs-based 1.3 and 1.55 µm lasers in which non-radiative Auger recombination is expected to be mitigated by type-II band offsets.

Original languageEnglish
Title of host publication2022 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350350012
DOIs
Publication statusPublished - 2022
Event2022 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2022 - Sapparo, Japan
Duration: 31 Jul 20225 Aug 2022

Publication series

Name2022 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2022 - Proceedings

Conference

Conference2022 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2022
Country/TerritoryJapan
CitySapparo
Period31/07/225/08/22

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