Strain-compensated type-II GaAs1−xBix/GaNyAs1−y “W” quantum wells for GaAs-based telecom lasers

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Abstract

We theoretically analyse strain-compensated GaAs1−xBix/GaNyAs1−y “W-type” quantum wells, demonstrating a viable approach to achieve efficient GaAs-based 1.3 and 1.55 µm lasers in which non-radiative Auger recombination is expected to be mitigated by type-II band offsets.

Original languageEnglish
JournalOptics InfoBase Conference Papers
DOIs
Publication statusPublished - 2022
Event2022 Conference on Lasers and Electro-Optics Pacific Rim, CLEO/PR 2022 - Sapporo, Japan
Duration: 31 Aug 20225 Sep 2022

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