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Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

  • L. Witters
  • , H. Arimura
  • , F. Sebaai
  • , A. Hikavyy
  • , A. P. Milenin
  • , R. Loo
  • , A. De Keersgieter
  • , G. Eneman
  • , T. Schram
  • , K. Wostyn
  • , K. Devriendt
  • , A. Schulze
  • , R. Lieten
  • , S. Bilodeau
  • , E. Cooper
  • , P. Storck
  • , E. Chiu
  • , C. Vrancken
  • , P. Favia
  • , E. Vancoille
    • J. Mitard, R. Langer, A. Opdebeeck, F. Holsteyns, N. Waldron, K. Barla, V. De Heyn, D. Mocuta, N. Collaert
  • Interuniversitair Micro-Elektronica Centrum
  • Entegris GmbH
  • Entegris, Inc.
  • Siltronic AG
  • HPSP

Research output: Contribution to journal › Article › peer-review

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