Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

L. Witters; J. Mitard; R. Loo; G. Eneman; H. Mertens; D. P. Brunco; S. H. Lee; N. Waldron; A. Hikavyy; P. Favia; A. P. Milenin; Y. Shimura; C. Vrancken; H. Bender; N. Horiguchi; K. Barla; A. Thean; N. Collaert

doi:10.1109/IEDM.2013.6724669

Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

L. Witters
, J. Mitard
, R. Loo
, G. Eneman
, H. Mertens
, D. P. Brunco
, S. H. Lee
, N. Waldron
, A. Hikavyy
, P. Favia
, A. P. Milenin
, Y. Shimura
, C. Vrancken
, H. Bender
, N. Horiguchi
, K. Barla
, A. Thean
, N. Collaert

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Strained Ge p-channel FinFETs on Strain Relaxed SiGe are reported for the first time, demonstrating peak transconductance gm_SAT of 1.3mS/μm at V_DS=-0.5V and good short channel control down to 60nm gate length. Optimization of P-doping in the SiGe, optimized Si cap passivation thickness on the Ge, and improved gate wrap of the channel all improve device characteristics. The Ge FinFETs presented in this work outperform published relaxed Ge FinFET devices for the gm_SAT/SS_SAT benchmarking metric.

Original language	English
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages	20.4.1-20.4.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724669
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: 9 Dec 2013 → 11 Dec 2013

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	9/12/13 → 11/12/13

Access to Document

10.1109/IEDM.2013.6724669

Cite this

Witters, L., Mitard, J., Loo, R., Eneman, G., Mertens, H., Brunco, D. P., Lee, S. H., Waldron, N., Hikavyy, A., Favia, P., Milenin, A. P., Shimura, Y., Vrancken, C., Bender, H., Horiguchi, N., Barla, K., Thean, A., & Collaert, N. (2013). Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 20.4.1-20.4.4). Article 6724669 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724669

@inproceedings{2f36ee4891a04cd49d260ebfe18d5cce,

title = "Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process",

abstract = "Strained Ge p-channel FinFETs on Strain Relaxed SiGe are reported for the first time, demonstrating peak transconductance gmSAT of 1.3mS/μm at VDS=-0.5V and good short channel control down to 60nm gate length. Optimization of P-doping in the SiGe, optimized Si cap passivation thickness on the Ge, and improved gate wrap of the channel all improve device characteristics. The Ge FinFETs presented in this work outperform published relaxed Ge FinFET devices for the gmSAT/SSSAT benchmarking metric.",

author = "L. Witters and J. Mitard and R. Loo and G. Eneman and H. Mertens and Brunco, \{D. P.\} and Lee, \{S. H.\} and N. Waldron and A. Hikavyy and P. Favia and Milenin, \{A. P.\} and Y. Shimura and C. Vrancken and H. Bender and N. Horiguchi and K. Barla and A. Thean and N. Collaert",

year = "2013",

doi = "10.1109/IEDM.2013.6724669",

language = "English",

isbn = "9781479923076",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "20.4.1--20.4.4",

booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",

note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",

}

Witters, L, Mitard, J, Loo, R, Eneman, G, Mertens, H, Brunco, DP, Lee, SH, Waldron, N, Hikavyy, A, Favia, P, Milenin, AP, Shimura, Y, Vrancken, C, Bender, H, Horiguchi, N, Barla, K, Thean, A & Collaert, N 2013, Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724669, Technical Digest - International Electron Devices Meeting, IEDM, pp. 20.4.1-20.4.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 9/12/13. https://doi.org/10.1109/IEDM.2013.6724669

Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process. / Witters, L.; Mitard, J.; Loo, R. et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 20.4.1-20.4.4 6724669 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

AU - Witters, L.

AU - Mitard, J.

AU - Loo, R.

AU - Eneman, G.

AU - Mertens, H.

AU - Brunco, D. P.

AU - Lee, S. H.

AU - Waldron, N.

AU - Hikavyy, A.

AU - Favia, P.

AU - Milenin, A. P.

AU - Shimura, Y.

AU - Vrancken, C.

AU - Bender, H.

AU - Horiguchi, N.

AU - Barla, K.

AU - Thean, A.

AU - Collaert, N.

PY - 2013

Y1 - 2013

N2 - Strained Ge p-channel FinFETs on Strain Relaxed SiGe are reported for the first time, demonstrating peak transconductance gmSAT of 1.3mS/μm at VDS=-0.5V and good short channel control down to 60nm gate length. Optimization of P-doping in the SiGe, optimized Si cap passivation thickness on the Ge, and improved gate wrap of the channel all improve device characteristics. The Ge FinFETs presented in this work outperform published relaxed Ge FinFET devices for the gmSAT/SSSAT benchmarking metric.

AB - Strained Ge p-channel FinFETs on Strain Relaxed SiGe are reported for the first time, demonstrating peak transconductance gmSAT of 1.3mS/μm at VDS=-0.5V and good short channel control down to 60nm gate length. Optimization of P-doping in the SiGe, optimized Si cap passivation thickness on the Ge, and improved gate wrap of the channel all improve device characteristics. The Ge FinFETs presented in this work outperform published relaxed Ge FinFET devices for the gmSAT/SSSAT benchmarking metric.

UR - https://www.scopus.com/pages/publications/84894296758

U2 - 10.1109/IEDM.2013.6724669

DO - 10.1109/IEDM.2013.6724669

M3 - Conference proceeding

AN - SCOPUS:84894296758

SN - 9781479923076

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 20.4.1-20.4.4

BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013

Y2 - 9 December 2013 through 11 December 2013

ER -

Witters L, Mitard J, Loo R, Eneman G, Mertens H, Brunco DP et al. Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process. In 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 20.4.1-20.4.4. 6724669. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2013.6724669

Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

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