Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process
- L. Witters
- , J. Mitard
- , R. Loo
- , G. Eneman
- , H. Mertens
- , D. P. Brunco
- , S. H. Lee
- , N. Waldron
- , A. Hikavyy
- , P. Favia
- , A. P. Milenin
- , Y. Shimura
- , C. Vrancken
- , H. Bender
- , N. Horiguchi
- , K. Barla
- , A. Thean
- , N. Collaert
- Interuniversitair Micro-Elektronica Centrum
- Global Foundries, Inc.
- Samsung
- KU Leuven
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review