| Original language | English |
|---|---|
| Journal | Journal of Applied Physics |
| Publication status | Published - 2015 |
Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
- Panpan Li
- , Hongjian Li
- , Zhi Li
- , Junjie Kang
- , Xiaoyan Yi
- , Jinmin Li
- , Guohong Wang
Research output: Contribution to journal › Article › peer-review