Strongly Electronic-Correlated Material for Ultrafast Electronics Application

  • O. M. Ishchenko
  • , F. Hamouda
  • , P. Aubert
  • , O. Tandia
  • , M. Modreanu
  • , D. I. Sharovarov
  • , F. Ya Akbar
  • , A. R. Kaul
  • , G. Garry

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

Strongly electronic-correlated material as VO2 has been investigated for ultrafast electronic applications due to their rapid and reversible Metal-Insulator transition. In this paper we report the design, simulation and fabrication of VO2-based RF-switches in two configurations (shunt and series). In order to achieve this goal thin layers of VO2 have been integrated with coplanar waveguides for the fabrication of microwave switches with thermally activated ON/OFF states. The MOCVD VO2 films were grown on sapphire substrates and have been characterized by XRD, AFM and Raman spectroscopy. The modeling and simulation results have been found to be in good agreement with the experimental RF measurements.

Original languageEnglish
Title of host publication18th International Conference on Nanotechnology, NANO 2018
PublisherIEEE Computer Society
ISBN (Electronic)9781538653364
DOIs
Publication statusPublished - 2 Jul 2018
Event18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland
Duration: 23 Jul 201826 Jul 2018

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2018-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference18th International Conference on Nanotechnology, NANO 2018
Country/TerritoryIreland
CityCork
Period23/07/1826/07/18

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