Structural analysis of feedback field effect transistor and its applications

This book chapter provides a comprehensive overview of the Feedback Field-effect Transistor (FBFET), detailing its structure, working principle, and diverse applications. The chapter explores the unique characteristics of FBFETs, including using positive feedback phenomena to enhance current flow, leading to a high on/off current ratio and exceptional subthreshold swing. Subthreshold Swing (SS) is an important parameter in evaluating the performance of a Field-effect Transistor (FET), such as a Feedback Field-Effect Transistor (FBFET). It indicates how efficiently the transistor can switch between the off state and the on state. Essentially, SS measures the sharpness of the transition from the off current (leakage current) to the on current (drive current) in an FET. Additionally, the chapter discusses the different types of device architectures and the operational theory of the device, highlighting its potential as a memory device due to hysteresis effects. This chapter provides a valuable resource for grasping the innovative design and versatile applications of FBFET technology. The optimal steep switching property of the alternative switching technology, i.e., the Feedback Field-effect Transistor (FBFET), has drawn attention. Utilizing the positive feedback phenomena, there is a significant increase in the overall quantity of holes and electrons contributing to drain current. FBFETs have a high on/off ratio of current (~10 10) and a great subthreshold swing (~00 millivolt/decade at 300 Kelvin) due to the positive feedback phenomena. Until the operation starts, the power utilization of the turn-off and on states is very small.