Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer

Ailbe O'Manachain

doi:10.1063/1.3473773

Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.3473773
Publication status	Published - 2010

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10.1063/1.3473773

Cite this

@article{277ba335973642d4931ec91674729a28,

title = "Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer",

author = "Ailbe O'Manachain",

year = "2010",

doi = "10.1063/1.3473773",

language = "Undefined/Unknown",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}