@article{0456701f8ed84d259fe610fa51d97ef7,
title = "Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate in Metal-Oxide-Semiconductor Capacitors",
keywords = "Layer (electronics), Atomic layer deposition, Materials science, X-ray absorption spectroscopy, Deposition (geology), Interface (matter), Thin film, Chemical engineering, Analytical Chemistry (journal), Chemistry, Nanotechnology, Composite material, Optics, Physics, Engineering, Geology, Absorption spectroscopy, Capillary number, Sediment, Capillary action, Paleontology, Chromatography",
author = "Ian Povey",
year = "2010",
doi = "10.1149/ma2010-02/20/1413",
language = "English",
journal = "Meeting Abstracts",
issn = "1091-8213",
}