| Original language | Undefined/Unknown |
|---|---|
| Title of host publication | ECS Meeting Abstracts |
| Publication status | Published - 2010 |
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Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review