Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks

Ailbe O'Manachain

doi:10.1149/1.3485243

Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	ECS Transactions
DOIs	https://doi.org/10.1149/1.3485243
Publication status	Published - 2010

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10.1149/1.3485243

Cite this

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title = "Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks",

author = "Ailbe O'Manachain",

year = "2010",

doi = "10.1149/1.3485243",

language = "Undefined/Unknown",

journal = "ECS Transactions",

issn = "1938-6737",

publisher = "Institute of Physics",

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TY - JOUR

T1 - Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks

AU - O'Manachain, Ailbe

PY - 2010

Y1 - 2010

U2 - 10.1149/1.3485243

DO - 10.1149/1.3485243

M3 - Article

SN - 1938-6737

JO - ECS Transactions

JF - ECS Transactions

ER -