Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks

Aileen O'Mahony; Scott Monaghan; Rosario Chiodo; Ian Povey; Karim Cherkaoui; Roger Nagle; Eamon O'Connor; Rathnait Long; Vladimir Djara; Dan O'Connell; others

Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks

Aileen O'Mahony
, Scott Monaghan
, Rosario Chiodo
, Ian Povey
, Karim Cherkaoui
, Roger Nagle
, Eamon O'Connor
, Rathnait Long
, Vladimir Djara
, Dan O'Connell
, others

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Electrochemical Society Transactions 218
Publication status	Published - 2010

Cite this

O'Mahony, A., Monaghan, S., Chiodo, R., Povey, I., Cherkaoui, K., Nagle, R., O'Connor, E., Long, R., Djara, V., O'Connell, D., & others (2010). Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks. Electrochemical Society Transactions 218.

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title = "Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks",

author = "Aileen O'Mahony and Scott Monaghan and Rosario Chiodo and Ian Povey and Karim Cherkaoui and Roger Nagle and Eamon O'Connor and Rathnait Long and Vladimir Djara and Dan O'Connell and others",

year = "2010",

language = "Undefined/Unknown",

journal = "Electrochemical Society Transactions 218",

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O'Mahony, A, Monaghan, S, Chiodo, R, Povey, I , Cherkaoui, K, Nagle, R, O'Connor, E, Long, R, Djara, V, O'Connell, D & others 2010, 'Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks', Electrochemical Society Transactions 218.

Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks. / O'Mahony, Aileen; Monaghan, Scott; Chiodo, Rosario et al.
In: Electrochemical Society Transactions 218, 2010.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate Stacks

AU - O'Mahony, Aileen

AU - Monaghan, Scott

AU - Chiodo, Rosario

AU - Povey, Ian

AU - Cherkaoui, Karim

AU - Nagle, Roger

AU - O'Connor, Eamon

AU - Long, Rathnait

AU - Djara, Vladimir

AU - O'Connell, Dan

AU - others,

PY - 2010

Y1 - 2010

M3 - Article

JO - Electrochemical Society Transactions 218

JF - Electrochemical Society Transactions 218

ER -