Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors

Aileen O'Mahony; Scott Monaghan; Rosario Chiodo; Ian Povey; Alan Blake; Karim Cherkaoui; Roger Nagle; Eamon O'Connor; Rathnait Long; Vladimir Djara; others

Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors

Aileen O'Mahony
, Scott Monaghan
, Rosario Chiodo
, Ian Povey
, Alan Blake
, Karim Cherkaoui
, Roger Nagle
, Eamon O'Connor
, Rathnait Long
, Vladimir Djara
, others

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Original language	Undefined/Unknown
Title of host publication	Electrochemical Society Meeting Abstracts 218
Publication status	Published - 2010

Cite this

O'Mahony, A., Monaghan, S., Chiodo, R., Povey, I., Blake, A., Cherkaoui, K., Nagle, R., O'Connor, E., Long, R., Djara, V., & others (2010). Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors. In Electrochemical Society Meeting Abstracts 218

O'Mahony, Aileen ; Monaghan, Scott ; Chiodo, Rosario et al. / Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors. Electrochemical Society Meeting Abstracts 218. 2010.

@inproceedings{2eabb14c6ca44f57b4ee627925a24862,

title = "Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors",

author = "Aileen O'Mahony and Scott Monaghan and Rosario Chiodo and Ian Povey and Alan Blake and Karim Cherkaoui and Roger Nagle and Eamon O'Connor and Rathnait Long and Vladimir Djara and others",

year = "2010",

language = "Undefined/Unknown",

booktitle = "Electrochemical Society Meeting Abstracts 218",

}

O'Mahony, A, Monaghan, S, Chiodo, R, Povey, I , Blake, A , Cherkaoui, K, Nagle, R, O'Connor, E, Long, R, Djara, V & others 2010, Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors. in Electrochemical Society Meeting Abstracts 218.

Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors. / O'Mahony, Aileen; Monaghan, Scott; Chiodo, Rosario et al.
Electrochemical Society Meeting Abstracts 218. 2010.

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors

AU - O'Mahony, Aileen

AU - Monaghan, Scott

AU - Chiodo, Rosario

AU - Povey, Ian

AU - Blake, Alan

AU - Cherkaoui, Karim

AU - Nagle, Roger

AU - O'Connor, Eamon

AU - Long, Rathnait

AU - Djara, Vladimir

AU - others,

PY - 2010

Y1 - 2010

M3 - Conference proceeding

BT - Electrochemical Society Meeting Abstracts 218

ER -

O'Mahony A, Monaghan S, Chiodo R, Povey I , Blake A , Cherkaoui K et al. Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M= Hf| Zr, x= 0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors. In Electrochemical Society Meeting Abstracts 218. 2010