Structural and electrical characterization of strontium bismuth tantalate (SBT) thin films

S. O'Brien; G. M. Crean; L. Cakare; M. Kosec

doi:10.1016/j.apsusc.2005.07.131

Structural and electrical characterization of strontium bismuth tantalate (SBT) thin films

S. O'Brien
, G. M. Crean
, L. Cakare
, M. Kosec

Research output: Contribution to journal › Article › peer-review

Abstract

Ferroelectric strontium bismuth tantalate (SBT) thin films were deposited by thermal metalorganic chemical vapour deposition (MOCVD) onto a complex layered Pt/IrO ₂ /Ir/Ti(Al)N substrate. A study of ultra-violet (UV)-assisted rapid thermal processing (RTP) annealing strategies of the SBT thin films was performed. The influence of UV irradiation temperature and annealing atmosphere on the crystallinity of the deposited films was evaluated using both microstructural and electrical analysis techniques. A UV-RTP strategy in an oxygen atmosphere above 400 °C, followed by a furnace treatment at 700 °C, provided an optimum remnant polarization figure of merit.

Original language	English
Pages (from-to)	4497-4501
Number of pages	5
Journal	Applied Surface Science
Volume	252
Issue number	13 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.apsusc.2005.07.131
Publication status	Published - 30 Apr 2006

Keywords

Ferroelectric
Polarization
SBT thin films

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10.1016/j.apsusc.2005.07.131

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@article{629f0db8bd6f44d7b842ac1e0a466595,

title = "Structural and electrical characterization of strontium bismuth tantalate (SBT) thin films",

abstract = " Ferroelectric strontium bismuth tantalate (SBT) thin films were deposited by thermal metalorganic chemical vapour deposition (MOCVD) onto a complex layered Pt/IrO 2 /Ir/Ti(Al)N substrate. A study of ultra-violet (UV)-assisted rapid thermal processing (RTP) annealing strategies of the SBT thin films was performed. The influence of UV irradiation temperature and annealing atmosphere on the crystallinity of the deposited films was evaluated using both microstructural and electrical analysis techniques. A UV-RTP strategy in an oxygen atmosphere above 400 °C, followed by a furnace treatment at 700 °C, provided an optimum remnant polarization figure of merit.",

keywords = "Ferroelectric, Polarization, SBT thin films",

author = "S. O'Brien and Crean, \{G. M.\} and L. Cakare and M. Kosec",

year = "2006",

month = apr,

day = "30",

doi = "10.1016/j.apsusc.2005.07.131",

language = "English",

volume = "252",

pages = "4497--4501",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "13 SPEC. ISS.",

}

TY - JOUR

T1 - Structural and electrical characterization of strontium bismuth tantalate (SBT) thin films

AU - O'Brien, S.

AU - Crean, G. M.

AU - Cakare, L.

AU - Kosec, M.

PY - 2006/4/30

Y1 - 2006/4/30

N2 - Ferroelectric strontium bismuth tantalate (SBT) thin films were deposited by thermal metalorganic chemical vapour deposition (MOCVD) onto a complex layered Pt/IrO 2 /Ir/Ti(Al)N substrate. A study of ultra-violet (UV)-assisted rapid thermal processing (RTP) annealing strategies of the SBT thin films was performed. The influence of UV irradiation temperature and annealing atmosphere on the crystallinity of the deposited films was evaluated using both microstructural and electrical analysis techniques. A UV-RTP strategy in an oxygen atmosphere above 400 °C, followed by a furnace treatment at 700 °C, provided an optimum remnant polarization figure of merit.

AB - Ferroelectric strontium bismuth tantalate (SBT) thin films were deposited by thermal metalorganic chemical vapour deposition (MOCVD) onto a complex layered Pt/IrO 2 /Ir/Ti(Al)N substrate. A study of ultra-violet (UV)-assisted rapid thermal processing (RTP) annealing strategies of the SBT thin films was performed. The influence of UV irradiation temperature and annealing atmosphere on the crystallinity of the deposited films was evaluated using both microstructural and electrical analysis techniques. A UV-RTP strategy in an oxygen atmosphere above 400 °C, followed by a furnace treatment at 700 °C, provided an optimum remnant polarization figure of merit.

KW - Ferroelectric

KW - Polarization

KW - SBT thin films

UR - https://www.scopus.com/pages/publications/33646543739

U2 - 10.1016/j.apsusc.2005.07.131

DO - 10.1016/j.apsusc.2005.07.131

M3 - Article

AN - SCOPUS:33646543739

SN - 0169-4332

VL - 252

SP - 4497

EP - 4501

JO - Applied Surface Science

JF - Applied Surface Science

IS - 13 SPEC. ISS.

ER -

Structural and electrical characterization of strontium bismuth tantalate (SBT) thin films

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Keywords

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