Structural and electrical investigation of MoS2 thin films formed by thermal assisted conversion of Mo metal

Ray Duffy; Patrick Foley; Bruno Filippone; Gioele Mirabelli; Dan O'Connell; Brendan Sheehan; Pat Carolan; Michael Schmidt; Karim Cherkaoui; Riley Gatensby; Toby Hallam; Georg Duesberg; Felice Crupi; Roger Nagle; Paul K. Hurleya

doi:10.1149/2.0041611jss

Structural and electrical investigation of MoS₂ thin films formed by thermal assisted conversion of Mo metal

Ray Duffy
, Patrick Foley
, Bruno Filippone
, Gioele Mirabelli
, Dan O'Connell
, Brendan Sheehan
, Pat Carolan
, Michael Schmidt
, Karim Cherkaoui
, Riley Gatensby
, Toby Hallam
, Georg Duesberg
, Felice Crupi
, Roger Nagle
, Paul K. Hurleya

Research output: Contribution to journal › Article › peer-review

Abstract

Large-area synthesis is of great demand for the preparation of high-performance transition-metal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS₂ devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterize the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS₂ thin-films to determine sheet resistance (R_sh), resistivity (ρ), and the activation energy (EA) of on-state current flow. For undoped MoS₂, ρ was determined to be 191 ω.cm at 25°C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS2.

Original language	English
Pages (from-to)	Q3016-Q3020
Journal	ECS Journal of Solid State Science and Technology
Volume	5
Issue number	11
DOIs	https://doi.org/10.1149/2.0041611jss
Publication status	Published - 2016

Access to Document

10.1149/2.0041611jss

https://hdl.handle.net/10468/3489Licence: CC BY-NC-ND

Cite this

Duffy, R., Foley, P., Filippone, B., Mirabelli, G., O'Connell, D., Sheehan, B., Carolan, P., Schmidt, M., Cherkaoui, K., Gatensby, R., Hallam, T., Duesberg, G., Crupi, F., Nagle, R., & Hurleya, P. K. (2016). Structural and electrical investigation of MoS₂ thin films formed by thermal assisted conversion of Mo metal. ECS Journal of Solid State Science and Technology, 5(11), Q3016-Q3020. https://doi.org/10.1149/2.0041611jss

@article{d216d5d96d694f378caeb0cdbfb03b6c,

title = "Structural and electrical investigation of MoS2 thin films formed by thermal assisted conversion of Mo metal",

abstract = "Large-area synthesis is of great demand for the preparation of high-performance transition-metal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS2 devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterize the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS2 thin-films to determine sheet resistance (Rsh), resistivity (ρ), and the activation energy (EA) of on-state current flow. For undoped MoS2, ρ was determined to be 191 ω.cm at 25°C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS2.",

author = "Ray Duffy and Patrick Foley and Bruno Filippone and Gioele Mirabelli and Dan O'Connell and Brendan Sheehan and Pat Carolan and Michael Schmidt and Karim Cherkaoui and Riley Gatensby and Toby Hallam and Georg Duesberg and Felice Crupi and Roger Nagle and Hurleya, \{Paul K.\}",

year = "2016",

doi = "10.1149/2.0041611jss",

language = "English",

volume = "5",

pages = "Q3016--Q3020",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "11",

}

Duffy, R, Foley, P, Filippone, B, Mirabelli, G, O'Connell, D, Sheehan, B, Carolan, P, Schmidt, M, Cherkaoui, K, Gatensby, R, Hallam, T, Duesberg, G, Crupi, F, Nagle, R & Hurleya, PK 2016, 'Structural and electrical investigation of MoS₂ thin films formed by thermal assisted conversion of Mo metal', ECS Journal of Solid State Science and Technology, vol. 5, no. 11, pp. Q3016-Q3020. https://doi.org/10.1149/2.0041611jss

TY - JOUR

T1 - Structural and electrical investigation of MoS2 thin films formed by thermal assisted conversion of Mo metal

AU - Duffy, Ray

AU - Foley, Patrick

AU - Filippone, Bruno

AU - Mirabelli, Gioele

AU - O'Connell, Dan

AU - Sheehan, Brendan

AU - Carolan, Pat

AU - Schmidt, Michael

AU - Cherkaoui, Karim

AU - Gatensby, Riley

AU - Hallam, Toby

AU - Duesberg, Georg

AU - Crupi, Felice

AU - Nagle, Roger

AU - Hurleya, Paul K.

PY - 2016

Y1 - 2016

N2 - Large-area synthesis is of great demand for the preparation of high-performance transition-metal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS2 devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterize the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS2 thin-films to determine sheet resistance (Rsh), resistivity (ρ), and the activation energy (EA) of on-state current flow. For undoped MoS2, ρ was determined to be 191 ω.cm at 25°C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS2.

AB - Large-area synthesis is of great demand for the preparation of high-performance transition-metal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS2 devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterize the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS2 thin-films to determine sheet resistance (Rsh), resistivity (ρ), and the activation energy (EA) of on-state current flow. For undoped MoS2, ρ was determined to be 191 ω.cm at 25°C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS2.

UR - https://www.scopus.com/pages/publications/85007153050

U2 - 10.1149/2.0041611jss

DO - 10.1149/2.0041611jss

M3 - Article

AN - SCOPUS:85007153050

SN - 2162-8769

VL - 5

SP - Q3016-Q3020

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 11

ER -

Structural and electrical investigation of MoS₂ thin films formed by thermal assisted conversion of Mo metal

Abstract

Access to Document

Other files and links

Fingerprint

Cite this