Structural and electrical properties of HfO2/n-In xGa1-xAs structures (X: 0, 0.15, 0.3 and 0.53)

P. K. Hurley; É O'Connor; S. Monaghan; R. D. Long; A. O'Mahony; I. M. Povey; K. Cherkaoui; J. MacHale; A. J. Quinn; G. Brammertz; M. Heyns; S. B. Newcomb; V. V. Afanas'ev; A. M. Sonnet; R. V. Galatage; M. N. Jivani; E. M. Vogel; R. M. Wallace; M. E. Pemble

doi:10.1149/1.3206612

Structural and electrical properties of HfO₂/n-In _xGa_1-xAs structures (X: 0, 0.15, 0.3 and 0.53)

P. K. Hurley
, É O'Connor
, S. Monaghan
, R. D. Long
, A. O'Mahony
, I. M. Povey
, K. Cherkaoui
, J. MacHale
, A. J. Quinn
, G. Brammertz
, M. Heyns
, S. B. Newcomb
, V. V. Afanas'ev
, A. M. Sonnet
, R. V. Galatage
, M. N. Jivani
, E. M. Vogel
, R. M. Wallace
, M. E. Pemble

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

In this work results are presented of an investigation into the structural and electrical properties of HfO₂ films on GaAs and In _xGa_1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitance-voltage responses of the GaAs and In_xGa_1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5×10 ¹³ cm^-2. For the HfO₂/In_0.53Ga _0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level ≥0.75 eV above the valence band in the HfO ₂/In_xGa_1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the In_xGa_1-xAs. The HfO₂/In_0.53Ga _0.47As interface exhibits two defects at 0.3eV (1.7×10 ¹³cm^-2eV) and 0.61eV (1.5×10¹³cm ^-2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325°C.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Publisher	Electrochemical Society Inc.
Pages	113-127
Number of pages	15
Edition	6
ISBN (Electronic)	9781607680932
ISBN (Print)	9781566777438
DOIs	https://doi.org/10.1149/1.3206612
Publication status	Published - 2009
Event	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 5 Oct 2009 → 7 Oct 2009

Publication series

Name	ECS Transactions
Number	6
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/Territory	Austria
City	Vienna
Period	5/10/09 → 7/10/09

Access to Document

10.1149/1.3206612

Cite this

Hurley, P. K., O'Connor, É., Monaghan, S., Long, R. D., O'Mahony, A., Povey, I. M., Cherkaoui, K., MacHale, J., Quinn, A. J., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas'ev, V. V., Sonnet, A. M., Galatage, R. V., Jivani, M. N., Vogel, E. M., Wallace, R. M., & Pemble, M. E. (2009). Structural and electrical properties of HfO₂/n-In _xGa_1-xAs structures (X: 0, 0.15, 0.3 and 0.53). In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 113-127). (ECS Transactions; Vol. 25, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3206612

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title = "Structural and electrical properties of HfO2/n-In xGa1-xAs structures (X: 0, 0.15, 0.3 and 0.53)",

abstract = "In this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and In xGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitance-voltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5×10 13 cm-2. For the HfO2/In0.53Ga 0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level ≥0.75 eV above the valence band in the HfO 2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga 0.47As interface exhibits two defects at 0.3eV (1.7×10 13cm-2eV) and 0.61eV (1.5×1013cm -2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325°C.",

author = "Hurley, \{P. K.\} and {\'E} O'Connor and S. Monaghan and Long, \{R. D.\} and A. O'Mahony and Povey, \{I. M.\} and K. Cherkaoui and J. MacHale and Quinn, \{A. J.\} and G. Brammertz and M. Heyns and Newcomb, \{S. B.\} and Afanas'ev, \{V. V.\} and Sonnet, \{A. M.\} and Galatage, \{R. V.\} and Jivani, \{M. N.\} and Vogel, \{E. M.\} and Wallace, \{R. M.\} and Pemble, \{M. E.\}",

year = "2009",

doi = "10.1149/1.3206612",

language = "English",

isbn = "9781566777438",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "113--127",

booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",

address = "United States",

edition = "6",

note = "7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society ; Conference date: 05-10-2009 Through 07-10-2009",

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Hurley, PK, O'Connor, É, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM , Cherkaoui, K, MacHale, J, Quinn, AJ, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Sonnet, AM, Galatage, RV, Jivani, MN, Vogel, EM, Wallace, RM & Pemble, ME 2009, Structural and electrical properties of HfO₂/n-In _xGa_1-xAs structures (X: 0, 0.15, 0.3 and 0.53). in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 edn, ECS Transactions, no. 6, vol. 25, Electrochemical Society Inc., pp. 113-127, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 5/10/09. https://doi.org/10.1149/1.3206612

Structural and electrical properties of HfO₂/n-In _xGa_1-xAs structures (X: 0, 0.15, 0.3 and 0.53). / Hurley, P. K.; O'Connor, É; Monaghan, S. et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. Electrochemical Society Inc., 2009. p. 113-127 (ECS Transactions; Vol. 25, No. 6).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Structural and electrical properties of HfO2/n-In xGa1-xAs structures (X: 0, 0.15, 0.3 and 0.53)

AU - Hurley, P. K.

AU - O'Connor, É

AU - Monaghan, S.

AU - Long, R. D.

AU - O'Mahony, A.

AU - Povey, I. M.

AU - Cherkaoui, K.

AU - MacHale, J.

AU - Quinn, A. J.

AU - Brammertz, G.

AU - Heyns, M.

AU - Newcomb, S. B.

AU - Afanas'ev, V. V.

AU - Sonnet, A. M.

AU - Galatage, R. V.

AU - Jivani, M. N.

AU - Vogel, E. M.

AU - Wallace, R. M.

AU - Pemble, M. E.

PY - 2009

Y1 - 2009

N2 - In this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and In xGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitance-voltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5×10 13 cm-2. For the HfO2/In0.53Ga 0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level ≥0.75 eV above the valence band in the HfO 2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga 0.47As interface exhibits two defects at 0.3eV (1.7×10 13cm-2eV) and 0.61eV (1.5×1013cm -2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325°C.

AB - In this work results are presented of an investigation into the structural and electrical properties of HfO2 films on GaAs and In xGa1-xAs substrates for x: 0.15, 0.30, and 0.53. The capacitance-voltage responses of the GaAs and InxGa1-xAs (x: 0.15 and 0.30) are dominated by an interface defect response. Analysis of these samples at 77K indicates that the defect density is > 2.5×10 13 cm-2. For the HfO2/In0.53Ga 0.47As system, 77K capacitance-voltage responses indicate surface accumulation is achieved. The results are consistent with a high defect density, with an energy level ≥0.75 eV above the valence band in the HfO 2/InxGa1-xAs system, where the defect energy with respect to the valence band, does not change with the composition of the InxGa1-xAs. The HfO2/In0.53Ga 0.47As interface exhibits two defects at 0.3eV (1.7×10 13cm-2eV) and 0.61eV (1.5×1013cm -2eV) above the valance band edge. The defect at 0.61eV is removed by forming gas annealing at 325°C.

UR - https://www.scopus.com/pages/publications/70350725864

U2 - 10.1149/1.3206612

DO - 10.1149/1.3206612

M3 - Chapter

AN - SCOPUS:70350725864

SN - 9781566777438

T3 - ECS Transactions

SP - 113

EP - 127

BT - ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7

PB - Electrochemical Society Inc.

T2 - 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society

Y2 - 5 October 2009 through 7 October 2009

ER -