@inbook{bf125d631849467983f0ca69ed513ef8,
title = "Structural and electrical properties of low temperature direct bonded Germanium to Silicon wafer for photodetector applications",
abstract = "A Ge/Si heterostructure with an ultra-thin transition layer was fabricated at low temperature by direct bonding. In-situ oxygen or nitrogen radical activation was performed after hydrophilic cleaning on both Germanium (Ge) and Silicon (Si) surfaces. The interfacial structure was analyzed by Scanning Acoustic Microscopy (SAM) and High-Resolution Transmission Electron Microscopy (HR-TEM). The samples were diced into mesa structures and electrical properties at different locations were used in order to characterize the quality of the bonded heterostructure.",
author = "Ran Yu and Byun, \{Ki Yeol\} and Farzan Gity and John Hayes and Isabelle Ferain and Cindy Colinge and Brian Corbett",
year = "2010",
doi = "10.1149/1.3483504",
language = "English",
isbn = "9781566778237",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "161--168",
booktitle = "Semiconductor Wafer Bonding 11",
address = "United States",
edition = "4",
}