Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications

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Keywords

@article{ea8c5a2dea864770a1347d11904926a0,

title = "Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications",

keywords = "Photodetector, Wafer, Germanium, Materials science, Optoelectronics, Silicon, Engineering physics, Engineering",

author = "Farzan Gity",

year = "2010",

doi = "10.1149/ma2010-02/27/1714",

language = "English",

journal = "Meeting Abstracts",

issn = "1091-8213",

}

TY - JOUR

T1 - Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications

AU - Gity, Farzan

PY - 2010

Y1 - 2010

KW - Photodetector

KW - Wafer

KW - Germanium

KW - Materials science

KW - Optoelectronics

KW - Silicon

KW - Engineering physics

KW - Engineering

U2 - 10.1149/ma2010-02/27/1714

DO - 10.1149/ma2010-02/27/1714

M3 - Article

SN - 1091-8213

JO - Meeting Abstracts

JF - Meeting Abstracts

ER -