Structural and electronic properties of wide band gap Zn 1-xMgxSe alloys

  • E. Pelucchi
  • , S. Rubini
  • , B. Bonanni
  • , A. Franciosi
  • , A. Zaoui
  • , M. Peressi
  • , A. Baldereschi
  • , D. De Salvador
  • , M. Berti
  • , A. Drigo
  • , F. Romanato

Research output: Contribution to journalArticlepeer-review

Abstract

The properties of Zn1-xMgxSe semiconductor alloys are discussed. A combination of optical and photoelectron spectroscopy, Rutherford backscattering spectrometry, x-ray diffraction and ab initio pseudopotential calculations is used for the purpose. Some of the discrepancies between the reported properties of these wide band gap alloys are explained by using the complementary character of the techniques. The results are found to be consistent with a bowing parameter for the lattice constant.

Original languageEnglish
Pages (from-to)4184-4192
Number of pages9
JournalJournal of Applied Physics
Volume95
Issue number8
DOIs
Publication statusPublished - 15 Apr 2004
Externally publishedYes

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