Skip to main navigation Skip to search Skip to main content

Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires

  • Francesca Rossi
  • , Filippo Fabbri
  • , Massimo Tallarida
  • , Dieter Schmeisser
  • , Mircea Modreanu
  • , Giovanni Attolini
  • , Giancarlo Salviati

Research output: Contribution to journalArticlepeer-review

Abstract

In this work we report the morphological, structural and luminescence properties of HfO2 nanocrystals grown on the surface of SiC/SiO2 core/shell nanowires by atomic layer deposition. All the studies are carried out in comparison with HfO2 nanocrystal aggregates grown on planar oxidized silicon substrates. The structural analyses reveal that HfO2 has monoclinic structure with different orientations. The cathodoluminescence emission shows the main components at 2.7 and 2.3 eV, deeply influenced by the arrangement and aggregation of the nanocrystals.

Original languageEnglish
Pages (from-to)744-747
Number of pages4
JournalScripta Materialia
Volume69
Issue number10
DOIs
Publication statusPublished - Nov 2013

Keywords

  • Hafnium oxide
  • Nanocrystals
  • Nanowires
  • Silicon carbide
  • Silicon dioxide

Fingerprint

Dive into the research topics of 'Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires'. Together they form a unique fingerprint.

Cite this