Structural and optical properties of Ga auto-incorporated InAlN epilayers

E. Taylor; M. D. Smith; T. C. Sadler; K. Lorenz; H. N. Li; E. Alves; P. J. Parbrook; R. W. Martin

doi:10.1016/j.jcrysgro.2014.09.031

Structural and optical properties of Ga auto-incorporated InAlN epilayers

E. Taylor
, M. D. Smith
, T. C. Sadler
, K. Lorenz
, H. N. Li
, E. Alves
, P. J. Parbrook
, R. W. Martin

Research output: Contribution to journal › Article › peer-review

Abstract

InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.

Original language	English
Pages (from-to)	97-101
Number of pages	5
Journal	Journal of Crystal Growth
Volume	408
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.09.031
Publication status	Published - 15 Dec 2014

Keywords

A1. Ga incorporation
A1. Rutherford backscattering spectrometry
A1. Wavelength dispersive x-ray
A3. Metalorganic chemical vapour deposition
B1. InAlGaN
B1. InAlN

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10.1016/j.jcrysgro.2014.09.031

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title = "Structural and optical properties of Ga auto-incorporated InAlN epilayers",

abstract = "InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24\%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.",

keywords = "A1. Ga incorporation, A1. Rutherford backscattering spectrometry, A1. Wavelength dispersive x-ray, A3. Metalorganic chemical vapour deposition, B1. InAlGaN, B1. InAlN",

author = "E. Taylor and Smith, \{M. D.\} and Sadler, \{T. C.\} and K. Lorenz and Li, \{H. N.\} and E. Alves and Parbrook, \{P. J.\} and Martin, \{R. W.\}",

note = "Publisher Copyright: {\textcopyright} 2014 The Authors. Published by Elsevier B.V.",

year = "2014",

month = dec,

day = "15",

doi = "10.1016/j.jcrysgro.2014.09.031",

language = "English",

volume = "408",

pages = "97--101",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Structural and optical properties of Ga auto-incorporated InAlN epilayers

AU - Taylor, E.

AU - Smith, M. D.

AU - Sadler, T. C.

AU - Lorenz, K.

AU - Li, H. N.

AU - Alves, E.

AU - Parbrook, P. J.

AU - Martin, R. W.

PY - 2014/12/15

Y1 - 2014/12/15

N2 - InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.

AB - InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.

KW - A1. Ga incorporation

KW - A1. Rutherford backscattering spectrometry

KW - A1. Wavelength dispersive x-ray

KW - A3. Metalorganic chemical vapour deposition

KW - B1. InAlGaN

KW - B1. InAlN

UR - https://www.scopus.com/pages/publications/84908023085

U2 - 10.1016/j.jcrysgro.2014.09.031

DO - 10.1016/j.jcrysgro.2014.09.031

M3 - Article

AN - SCOPUS:84908023085

SN - 0022-0248

VL - 408

SP - 97

EP - 101

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Structural and optical properties of Ga auto-incorporated InAlN epilayers

Abstract

Keywords

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