Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide

K. M. Coward; A. C. Jones; M. E. Pemble; T. B. Joyce; L. M. Smith

doi:10.1016/S0022-0248(99)00556-4

Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide

K. M. Coward
, A. C. Jones
, M. E. Pemble
, T. B. Joyce
, L. M. Smith

Research output: Contribution to journal › Article › peer-review

Abstract

Neopentyl iodide (NpI) has been shown to be an inefficient carbon-doping source for GaAs and AlGaAs, but is some two orders of magnitude more efficient in AlAs. This difference in NpI doping behaviour is attributed to a significant difference in the surface chemistry of NpI on AlAs, possibly due to a lack of reactive hydrogen during layer growth.

Original language	English
Pages (from-to)	286-289
Number of pages	4
Journal	Journal of Crystal Growth
Volume	209
Issue number	2-3
DOIs	https://doi.org/10.1016/S0022-0248(99)00556-4
Publication status	Published - Feb 2000
Externally published	Yes
Event	The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn Duration: 28 Jul 1999 → 30 Jul 1999

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10.1016/S0022-0248(99)00556-4

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title = "Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide",

abstract = "Neopentyl iodide (NpI) has been shown to be an inefficient carbon-doping source for GaAs and AlGaAs, but is some two orders of magnitude more efficient in AlAs. This difference in NpI doping behaviour is attributed to a significant difference in the surface chemistry of NpI on AlAs, possibly due to a lack of reactive hydrogen during layer growth.",

author = "Coward, \{K. M.\} and Jones, \{A. C.\} and Pemble, \{M. E.\} and Joyce, \{T. B.\} and Smith, \{L. M.\}",

year = "2000",

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doi = "10.1016/S0022-0248(99)00556-4",

language = "English",

volume = "209",

pages = "286--289",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2-3",

note = "The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques ; Conference date: 28-07-1999 Through 30-07-1999",

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TY - JOUR

T1 - Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide

AU - Coward, K. M.

AU - Jones, A. C.

AU - Pemble, M. E.

AU - Joyce, T. B.

AU - Smith, L. M.

PY - 2000/2

Y1 - 2000/2

N2 - Neopentyl iodide (NpI) has been shown to be an inefficient carbon-doping source for GaAs and AlGaAs, but is some two orders of magnitude more efficient in AlAs. This difference in NpI doping behaviour is attributed to a significant difference in the surface chemistry of NpI on AlAs, possibly due to a lack of reactive hydrogen during layer growth.

AB - Neopentyl iodide (NpI) has been shown to be an inefficient carbon-doping source for GaAs and AlGaAs, but is some two orders of magnitude more efficient in AlAs. This difference in NpI doping behaviour is attributed to a significant difference in the surface chemistry of NpI on AlAs, possibly due to a lack of reactive hydrogen during layer growth.

UR - https://www.scopus.com/pages/publications/0034140025

U2 - 10.1016/S0022-0248(99)00556-4

DO - 10.1016/S0022-0248(99)00556-4

M3 - Article

AN - SCOPUS:0034140025

SN - 0022-0248

VL - 209

SP - 286

EP - 289

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

T2 - The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques

Y2 - 28 July 1999 through 30 July 1999

ER -

Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide

Abstract

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