Studies on suppressed surface recombination of InGaN-based red light-emitting diodes with V-pits

InGaN-based red light-emitting diodes (LEDs) are a promising candidate to achieve high efficiency, which is highly desired by the display market. Understanding their size-dependent properties is crucial for further performance improvement. In this work, different sized InGaN red LEDs (from 500 × 500 to 15 × 15 µm²) based on V-pits were characterized systematically. The current–voltage characteristics show that the leakage current density, revealed either in forward or reverse bias, is independent of the chip size. Further light output power measurements and current dependent electroluminescence also reveal very weak dependence of the power density on chip size showing insensitivity the chip perimeter. The suppressed surface recombination effect may be due to effective carrier trapping effect by the V-pits, which prevents the carriers from flowing to the sidewalls. By detailed analysis of the spatially resolved electroluminescence, an anti-correlation between the emission wavelengths and the intensities was observed, with the longer wavelength emitting regions exhibit weaker intensity, which can be explained by the reduced carrier density in the V-pit-rich regions as carriers are partially captured by quantum wells associated with the V-pits and the associated dislocations. This study will pave the way for further understanding and improving the efficiency of InGaN red LEDs including micro-LEDs.