TY - CHAP
T1 - Study of interface and oxide defects in high-k/In 0.53Ga 0.47As n-MOSFETs
AU - Djara, V.
AU - Cherkaoui, K.
AU - Schmidt, M.
AU - Gomeniuk, Y. Y.
AU - O'Connor, É
AU - Povey, I. M.
AU - O'Connell, D.
AU - Monaghan, S.
AU - Pemble, M. E.
AU - Hurley, P. K.
PY - 2012
Y1 - 2012
N2 - Interface and oxide defects in surface-channel In 0.53Ga 0.47As n-MOSFETs, featuring a threshold voltage, V T, of 0.43 V, a subthreshold swing, SS, of 150 mV/dec, an I ON/I OFF of ∼ 10 4 and a source/drain resistance, R SD, of 103 Ω, have been investigated using "split C-V" measurements and self-consistent Poisson-Schrödinger quasi-static C-V simulations. An integrated density of traps across the In 0.53Ga 0.47As band gap at the Al 2O 3/In 0.53Ga 0.47As interface, N Trap, of ∼ 7.8 x 10 12 /cm 2, has been obtained from a comparison of the theoretical and experimental quasi-static C-V responses, where N Trap reflects the combined contribution of interface traps and border traps. An equivalent surface density of fixed positive oxide charges, N +, of 1.4 x 10 12 /cm 2 is also reported. Finally, the application of the Maserjian Y-function to the Al 2O 3/In 0.53Ga 0.47As MOS system is briefly discussed.
AB - Interface and oxide defects in surface-channel In 0.53Ga 0.47As n-MOSFETs, featuring a threshold voltage, V T, of 0.43 V, a subthreshold swing, SS, of 150 mV/dec, an I ON/I OFF of ∼ 10 4 and a source/drain resistance, R SD, of 103 Ω, have been investigated using "split C-V" measurements and self-consistent Poisson-Schrödinger quasi-static C-V simulations. An integrated density of traps across the In 0.53Ga 0.47As band gap at the Al 2O 3/In 0.53Ga 0.47As interface, N Trap, of ∼ 7.8 x 10 12 /cm 2, has been obtained from a comparison of the theoretical and experimental quasi-static C-V responses, where N Trap reflects the combined contribution of interface traps and border traps. An equivalent surface density of fixed positive oxide charges, N +, of 1.4 x 10 12 /cm 2 is also reported. Finally, the application of the Maserjian Y-function to the Al 2O 3/In 0.53Ga 0.47As MOS system is briefly discussed.
KW - border traps
KW - High-k
KW - InGaAs
KW - interface traps
KW - MOSFET
KW - oxide charges
KW - Split C-V
UR - https://www.scopus.com/pages/publications/84861210985
U2 - 10.1109/ULIS.2012.6193349
DO - 10.1109/ULIS.2012.6193349
M3 - Chapter
AN - SCOPUS:84861210985
SN - 9781467301916
T3 - 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
SP - 29
EP - 32
BT - 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
T2 - 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
Y2 - 6 March 2012 through 7 March 2012
ER -