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Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics

  • Bienlo Flora Zerbo
  • , Mircea Modreanu
  • , Ian Povey
  • , Jun Lin
  • , Antoine Létoublon
  • , Alain Rolland
  • , Laurent Pédesseau
  • , Jacky Even
  • , Bruno Lépine
  • , Pascal Turban
  • , Philippe Schieffer
  • , Alain Moréac
  • , Olivier Durand

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-silicon heterojunction solar cells, consisting of a preliminary study of the MoS2 material and numerical device simulations of MoS2/Si heterojunction solar cells, using SILVACO ATLAS. Through the optical and structural characterization of MoS2/SiO2/Si samples, we found a significant sensitivity of the MoS2 to ambient oxidation. Optical ellipsometry showed a bandgap of 1.87 eV for a 7 monolayer thick MoS2 sample, suitable for the targeted application. Finally, we briefly introduce a device simulation and show that the MoS2/Si heterojunction could lead to a gain in quantum efficiency, especially in the region with short wavelengths, compared with a standard a-Si/c-Si solar cell.

Original languageEnglish
Article number1363
JournalCrystals
Volume12
Issue number10
DOIs
Publication statusPublished - Oct 2022

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • 2D molybdenum disulfide
  • silicon heterojunctions
  • solar cells

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