Study on the proximity of QWI in InP-based AlGaInAs MQWs using the IFVD method and its application in single frequency teardrop laser diodes

This paper presents our research on quantum well intermixing (QWI) of InP-based AlGaInAs/AlGaInAs multi-quantum wells using impurity-free vacancy-disordering (IFVD) and the QWI mask proximity effect and its application in the design and fabrication of a teardrop laser. Using a Si₃N₄ film deposited by plasma-enhanced chemical vapor deposition (PECVD) as a QWI promoter mask and annealing under 700°C for 2 minutes, a 70 nm wavelength blue shift of a FP laser is achieved using InP-based AlGaInAs quantum well laser material. It is found that a 5 µm separation is needed between the QWI mask edges and the non-QWI area during the QWI process. Based on the QWI technique and proximity effect, the designed and fabricated teardrop laser demonstrated continuous wave (CW) lasing above 40 mA and single frequency operation with a side mode suppression ratio of 32.6 dB at 77.3 mA.