Abstract
Sub 10 ps photocarrier response time in an electroabsoption modulator using a custom epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping, and valence band discontinuity minimization, to achieve a 3.5 ps response time, when biased at -4.5 V. The quantum well offsetting also allows bandwidth optimization for a specific extinction ratio.
| Original language | English |
|---|---|
| Article number | 6255754 |
| Pages (from-to) | 1467-1475 |
| Number of pages | 9 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 48 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2012 |
Keywords
- Carrier transit time
- electro-absorption modulator
- epitaxy optimization
- quantum confined Stark effect
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