Sub 10 ps Carrier Response Times in Electroabsorption Modulators Using Quantum Well Offsetting

Research output: Contribution to journalArticlepeer-review

Abstract

Sub 10 ps photocarrier response time in an electroabsoption modulator using a custom epitaxy structure is demonstrated. This design used quantum well offsetting, carbon doping, and valence band discontinuity minimization, to achieve a 3.5 ps response time, when biased at -4.5 V. The quantum well offsetting also allows bandwidth optimization for a specific extinction ratio.

Original languageEnglish
Article number6255754
Pages (from-to)1467-1475
Number of pages9
JournalIEEE Journal of Quantum Electronics
Volume48
Issue number11
DOIs
Publication statusPublished - 2012

Keywords

  • Carrier transit time
  • electro-absorption modulator
  • epitaxy optimization
  • quantum confined Stark effect

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