Sub 10 ps carrier response times in electroabsorption modulators using quantum well offsetting

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Abstract

We demonstrate sub 10 ps photo-carrier response times in an electroabsoption modulator having a custom epitaxy structure. The structure used quantum well offsetting and carbon doping to achieve a 2.5 ps response time, when biased at -4.5 V.

Original languageEnglish
Title of host publicationFrontiers in Optics, FiO 2011
Publication statusPublished - 2011
EventFrontiers in Optics, FiO 2011 - San Jose, CA, United States
Duration: 16 Oct 201120 Oct 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceFrontiers in Optics, FiO 2011
Country/TerritoryUnited States
CitySan Jose, CA
Period16/10/1120/10/11

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